Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Güçlü, Ç. Ş.; Özdemir, Ahmet Faruk; Karabulut, Abdulkerim; Kökçe, Ali; Altındal, Ş.

doi:10.1016/j.mssp.2018.08.019

Cited by 60 publications

(20 citation statements)

References 44 publications

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“…Güçlü et al [30] showed that the Schottky barrier is obtained by inserting a thin insulator layer of Al 2 O 3 using atomic layer deposition on a n-GaAs substrate. Table 1 presents summary of some of these studies, depending on the oxide growth and different substrates used.…”

Section: Reviewmentioning

confidence: 99%

“…The barrier height lowering with an increase in thickness is due to the potential drop in the layer [29]. The reverse bias current characteristics for Ni/TiO 2 /SiC and Ni/HfO 2 /SiC Schottky structures are shown in figure 1.Güçlü et al [30] showed that the Schottky barrier is obtained by inserting a thin insulator layer of Al 2 O 3 using atomic layer deposition on a n-GaAs substrate. Table 1 presents summary of some of these studies, depending on the oxide growth and different substrates used.The comparison of the physical properties of the semiconductors is provided in table 2 concerning Si, ultrawide bandgap (β-Ga 2 O 3 ) and wide bandgap (GaN, SiC).…”

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confidence: 99%

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Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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Section: Reviewmentioning

confidence: 99%

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confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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“…In addition, it is well known that thin interface layers can significantly change the electrical characteristics of the MS contact. [ 15 ] Therefore, in this study, we aimed to investigate I–V and C–V characteristics of the prepared Ti/n‐InP Schottky diodes with organic GO interlayer in wide temperature range to determine the dominant conduction mechanism of the diode and investigate the effect of GO interlayer on diode parameters. Therefore, Ti/GO/n‐InP SBD was produced by producing GO film with cheap and simple spray pyrolysis method.…”

Section: Introductionmentioning

confidence: 99%

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Çatır

2020

Physica Status Solidi (a)

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Ti/GO/n-InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of GO as the interfacial layer on device performance of Ti/GO/n-InP SBD is investigated in detail. The optical absorbance spectra show that bandgap energy of the GO film is 3.57 eV. The optical transmittance value of 79.5% is in consistent with the absorbance spectra of GO film. The barrier heights (BHs) that are estimated for the Ti/GO/n-InP SBD vary from 0.263 to 0.980 eV (I-V) and 1.328 to 1.006 eV (C-V) from the I-V and C-V measurements in the temperature range of 100-400 K. The contradiction between the BHs from the I-V and C-V characteristics is discussed. The mean BH values are found to be Φ b01 ¼ 0.98 eV (250-400 K) and Φ b02 ¼ 0.73 eV (100-250 K) from the Φ b0-1/2kT plot. From the modified Richardson plots based on a Gaussian distribution of BH, Φ b01 ¼ 0.93 (250-400 K) and Φ b02 ¼ 0.69 eV (100-250 K) and A* is calculated to be 12.44 and 12.73 A cm À2 K À2 , respectively. The I-V-T and C-V-T measurements demonstrate that carrier transport mechanism of Ti/GO/n-InP is well explained by thermionic emission (TE) mechanism with a double Gaussian distribution of the Schottky barrier heights (SBHs).

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“…One of the most important fabrication processes is the spin coating technique. This technique has many advantages such as cheap, easy coating and surface homogeneity (Karabulut et al,2018;Güclü et al,2019). Especially, the efficiency and electrical performance of MPS structure are depend on some parameters such as conduction mechanism, frequency, temperature, inhomogeneity surface preparation, growth, thickness, series resistance (Rs) and barrier height (Cifci et al, 2018;Bilkan et al,2015).…”

Section: Introductionmentioning

confidence: 99%

Tiyosemikarbazon ve Rodanin Türevlerinin Katalizörsüz Sentezi ve Onların Schottky Diyot Uygulamaları

Bayındır

Şahinkaya

Orak

2019

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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In the present study, organic materials Bis(TSC)-Ph and novel Bis(Rh)-Ph were synthesized and used such as interfacial layer for diode applications. Al/ Bis(TSC)-Ph/p type Si and Al/ Bis(Rh)-Ph/p type Si Schottky diodes were fabricated with spin coating and thermal evaporation methods. The electrical parameters were investigated by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at various frequencies from 30 kHz to 5 Mhz at room temperature. The effect of frequency on device performance was examined and compared with each other. The some basically parameters such as acceptor concentration (Na), interface states (Nss), Fermi level (Ef) and barrier height () were also calculated from C-2-V measurements. According to these results, as expected, it was determined that Bis(Rh)-Ph organic layer, which is containing the rhodanine group, is more suitable than Bis(TSC)-Ph for C-V and G-V performances.

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Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Cited by 60 publications

References 44 publications

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Tiyosemikarbazon ve Rodanin Türevlerinin Katalizörsüz Sentezi ve Onların Schottky Diyot Uygulamaları

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