Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers

Bajt, Saša; Stearns, D. G.; Kearney, Patrick A.

doi:10.1063/1.1381559

Cited by 142 publications

(130 citation statements)

References 26 publications

Supporting

Mentioning

116

Contrasting

Unclassified

Order By: Relevance

“…This e®ect and the most likely mechanism behind such an asymmetry were discussed by several research groups in detail [32,36,[38][39][40][51][52][53][54]. The qualitative analysis of the experimental data and the results of numerical simulation of the deposition processes show that, most likely, the intermediate layer asymmetry stems from the di®erence in the conditions at very early stages of formation of continuous¯lms on the amorphous surface of silicon and on the surface of molybdenum crystals [38,54]. Our TEM micrographs also revealed the¯lm microstructure to be the dominant factor governing formation of transition layers.…”

Section: Mirrors For Euv-lithographymentioning

confidence: 99%

Multilayer optics for XUV spectral region: technology fabrication and applications

et al. 2003

View full text Add to dashboard Cite

We present research investigations in the eld of multilayer optics in X-ray and extreme ultra-violet ranges (XUV), aimed at the development of optical elements for applications in experiments in physics and in scienti c instrumentation. We discuss normal incidence multilayer optics in the spectral region of \water window", multilayer optics for collimation and focusing of hard X-rays, multilayer dispersing elements for X-ray spectroscopy of high-temperature plasma, multilayer dispersing elements for analysis of low Z-elements. Our research pays special attention to optimization of multilayer optics for projection EUV-lithography ( ¶ = 13nm) and short period multilayer optics.

show abstract

Section: Mirrors For Euv-lithographymentioning

confidence: 99%

Multilayer optics for XUV spectral region: technology fabrication and applications

et al. 2003

View full text Add to dashboard Cite

show abstract

“…This kind of growth process is similar to the model for the Mo/a-Si multilayers 13 , except the symmetrical transformation in the interlayers.…”

Section: Discussionmentioning

confidence: 94%

“…In particular, the amorphous-to-crystalline transition can be identified by a sharp, transient increase in the roughness. 13 The roughness increases from a value of 0.21 nm below the transition to a peak value of 0.57 nm within the transition at the thickness (1.8 nm) of Al(1%wtSi) layer. Above the transition, the surface roughness begins to decrease, but it is still much higher than the value below the transition.…”

Section: Grazing Incident X-ray Reflectionmentioning

confidence: 99%

“…Above 3.0 nm, the interlayers become symmetrical; both interlayers are having a 1.5 nm thickness. 11 To explain the results from GIXR, AFM, XRD and TEM measurements, we present a growth model for the transition in the Al(1%wtSi) and Al(Pure) layers that is based on the concept of critical thickness 13 for the nucleation of a crystalline phase. The amorphous-to-crystalline transition exhibits several interesting features:…”

Section: High-resolution Transmission Electron Microscopymentioning

confidence: 99%

See 1 more Smart Citation

The transition from amorphous to crystalline in Al/Zr multilayers

Zhong

Zhang

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

ABSTRACT:The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0-5.0 nm) by using a series of complementary measurements including grazing incidence X-ray reflectometry, atomic force microscopy, X-ray diffraction and high-resolution transmission electron microscopy. The Al layer thickness transition exhibits the Si doped in Al could not only disfavor the crystallization of Al, but also influence the changing trends of surface roughness and diffraction peak position of phase Al<111>. An interesting feature of the presence of Si in Al layer is that Si could influence the transition process in Al(1%wtSi) layer, in which the critical thickness (1.6 nm) of Al(Pure) layer in Al(Pure)/Zr shifts to 1.8 nm of Al(1.0%wtSi) layer in Al(1.0%wtSi)/Zr multilayer. We also found that the Zr-on-Al interlayer is wider than the Al-on-Zr interlayer in both systems, and the Al layers do not have specific crystal orientation in the directions vertical to the layer from SAED patterns below the thickness (3.0 nm) of Al layers. Above the thickness (3.0 nm) of Al layers, the Al layers are highly oriented in Al<111>, so that the transformation from asymmetrical to symmetrical interlayers can be observed. Based on the analysis of all measurements, we build up a model with four steps, which could explain the Al layer thickness transition process in terms of a critical thickness for the nucleation of Al(Pure) and Al(1%wtSi) crystallites.

show abstract

“…For crystalline Mo, it is also known that the formed Mo-on-Si interface is about 1 nm thick, while the formed Si-on-Mo interface is about 0.5 nm thick. When Mo is amorphous however, both interfaces are about 1 nm thick [5,6,7].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

Bruijn

Kruijs

Yakshin

et al. 2009

DDF

View full text Add to dashboard Cite

Abstract. Thermally induced diffusion through the Si-on-Mo interface of multilayers with either amorphous or polycrystalline Mo layers has been investigated using grazing incidence and wide angle x-ray reflectometry. Diffusion through the Mo-on-Si interface was reduced by applying a diffusion barrier, allowing us to probe the diffusion at the opposite, Si-on-Mo interface. We found that diffusion through this interface is much slower for polycrystalline Mo than for amorphous Mo layers. The reason for this difference might be the larger defect concentration in amorphous Mo as compared to crystalline Mo.

show abstract

Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers

Cited by 142 publications

References 26 publications

Multilayer optics for XUV spectral region: technology fabrication and applications

Multilayer optics for XUV spectral region: technology fabrication and applications

The transition from amorphous to crystalline in Al/Zr multilayers

The Effect of Mo Crystallinity on Diffusion through the Si-on-Mo Interface in EUV Multilayer Systems

Contact Info

Product

Resources

About