Investigation of the Cu/GaAs(110) interface formation

Bolmont, D.; Mercier, Virginie; Chen, P.; Lüth, H.; Sébenne, C.A.

doi:10.1016/0039-6028(83)90750-1

Cited by 14 publications

(11 citation statements)

References 12 publications

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“…The surface area between the islands remains clean, i.e. free of any metal adatoms (Kahn 1983, Bolmont et al 1983, Bonapace et a1 1985. Nominal coverages of some tens of A and, occasionally, up to 1008, are need until the overlayers eventually become complete (Savage andLagally 1986, Rodrigues and.…”

Section: W Monchmentioning

confidence: 99%

On the physics of metal-semiconductor interfaces

Mönch¹

1990

Rep. Prog. Phys.

277

139

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Almost all metal-semiconductor or Schottky contacts exhibit rectifying behaviour which is caused by a depletion layer on the semiconductor side of the interface. The electronic properties of a Schottky diode are characterised by its barrier height which is the energy difference between the top of the valence band of the semiconductor and the Fermi level at the interface. The physical mechanism primarily determining barrier height is provided by the decay of the metal's electron wavefunctions into the semiconductor in the energy range between the top of the valence band and the Fermi level where the metal conduction band overlaps the semiconductor band gap. These wavefunction tails are described as the continuum of metal-induced gap states (MIGS) which are derived from the virtual gap states of the complex semiconductor band structure. The interface boundary condition is given by charge transfer across the contact which may be modelled by the difference between the metal and the semiconductor electronegativities. Much insight into this mechanism was gained from studies of metal adatoms on semiconductors which are obtained by evaporation on substrates held at low temperatures and which induce surface states of donor type as well as surface dipoles. Deviations of barrier heights from what is predicted by the MIGs-andelectronegativity concept are attributed to fabrication-induced interface defects of donor type as a secondary mechanism. Their nature, however, is unknown. Furthermore, interface strains may also be of importance.

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Section: W Monchmentioning

confidence: 99%

On the physics of metal-semiconductor interfaces

Mönch¹

1990

Rep. Prog. Phys.

277

139

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“…Contrary to the case of Ag [1] no evidence of an epitaxial growth of Au metal is found from LEED. The behaviour of Au resembles more that of Cu [2] ; with the latter element, however, the GaAs (1 x 1) diagram fades away more slowly.…”

Section: Resultsmentioning

confidence: 88%

“…J. Physique 46 (1985) In earlier work we have studied the initial steps of the interface formation between Ag [1] or Cu [2] and the clean cleaved surface of GaAs (110) at room temperature. It was found that silver grows epitaxially on GaAs, as confirmed by Ludeke et al [3] giving a film with a saw-toothed profile after deposition of several monolayers, but without disturbing significantly the bonds between Ga and As atoms up to the interface.…”

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confidence: 99%

“…Brillson et al [10,11] using Al as a probe proposed also the formation of an alloy. In the present work, we take advantage of the simultaneous use of several complementary techniques which have been already successfully employed to study several similar systems [1,2,12], to get a more accurate picture of the first steps of the Au/GaAs (110) interface formation. In particular, the band bending changes on both n-and p-type substrates upon increasing metal deposition will be compared with the Schottky barrier value of 0.98 eV obtained under similar initial conditions by Chekir, Barret and Vapaille [13] on n-type GaAs substrates.…”

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Room temperature adsorption of au on cleaved GaAs (110)

et al. 1985

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The early stages of ultrahigh vacuum deposition of Au, from 10-3 to about 102 monolayers (ML) on an initially clean cleaved (110) surface of GaAs kept at room temperature are studied. Crystallographic, compositional and electronic surface data are obtained using low energy electron diffraction (LEED), Auger electron spectroscopy (AES), electron loss spectroscopy (ELS) and photoemission yield spectroscopy. After surface reconstruction effects at coverages below 0.1 ML, the formation of a two-dimensional compound is observed which brings a specific density of states determining the Fermi level position; a model is developed leading to a compound about 8 A thick with four Au atoms per GaAs surface unit cell. The formation of more and more spread islands of Au follows

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“…In recent years, various metal-silicon interfaces have been studied, motivated by their relevance in microelectronics applications. Naturally, almost all these studies involve deposition of thin metal films in ultra high-vacuum (UHV) on atomically clean and well-ordered Si substrates [1][2][3][4][5][6][7][8]. Some more recent studies explored the initial stages of the interface formation by investigating the deposition behaviour of silicon on metal, thus many different combinations of metals and Si have been quite extensively studied [8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 × 3) silicide structure on Cu(001)

Lalmi

Chorro

Belkhou

2013

Journal of Applied Physics

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Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM) andx-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (~ 0.5 ML) and after annealing at 100°C, STM images and LEED patterns reveal the formation of an ordered quasi commensurate (5 3) × superstructure. From a quantitative analysis of XAS data, we extract the Si-Cu distance and detail the local atomic arrangement of the (5 3) × structure.

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Investigation of the Cu/GaAs(110) interface formation

Cited by 14 publications

References 12 publications

On the physics of metal-semiconductor interfaces

On the physics of metal-semiconductor interfaces

Room temperature adsorption of au on cleaved GaAs (110)

High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 × 3) silicide structure on Cu(001)

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