Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

Liu, Kou Chen; Tzeng, Wen Hsien; Chang, Kow–Ming; Huang, Jiun Jie; Lee, Yun Ju; Yeh, Ping Hung; Chen, Pang Shiu; Lee, Heng Yuan; Chen, Frederick; Tsai, M. J.

doi:10.1016/j.tsf.2011.04.205

Cited by 26 publications

(8 citation statements)

References 27 publications

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“…Yu et al reported the multi-level RS performance of Ag/SiO 2 /Pt RRAM devices with operation voltage smaller than 1.5 V and switching ratio higher than 10 2 , which was affected by the formation of multiple Ag filaments [ 49 ]. Apart from binary oxides, complex oxides with higher dielectric constants, such as LaAlO 3 [ 10 , 86 ], SrTiO 3 [ 87 , 121 ], Pr 0.7 Ca 0.3 MnO 3 [ 23 , 122 ] and BiFeO 3 [ 11 , 88 ] are also explored to improve the switching performance of RRAM devices. Bailey et al exhibited a stack-layered RRAM device with a structure of W/SrTiO 3 (STO)/TiN, which systematically investigated the diffusion phenomenon of ionic defects in oxides associated with various configuration states of STO layer.…”

Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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“…2 . Both S1 and S4 exhibit an amorphous structure as no nanometer-sized crystal or long-range ordered crystal region was observed [ 19 ]. Compared with Fig.…”

Section: Resultsmentioning

confidence: 99%

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

et al. 2017

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We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O2 ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO3/Si MIS capacitors, positive V FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO3/Si structure in varying degrees.

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“…A smooth surface with a root mean square roughness of about 1.3 nm is obtained over an area of 3 × 3 m 2 . Both TiO 2 and LAO layers are deposited below their crystallization temperature [32,33] and are amorphous as indicated by X-ray diffraction. Figure 1(b) shows the cross-sectional SEM image of a TiO 2 /LAO sample in which the LAO layer is deposited for 20 min.…”

Section: Resultsmentioning

confidence: 99%

Resistive Switching Characteristics in TiO₂/LaAlO₃Heterostructures Sandwiched in Pt Electrodes

Cao

Zhu

et al. 2015

Advances in Materials Science and Engineering

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TiO2/LaAlO3(TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.

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Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

Cited by 26 publications

References 27 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

Resistive Switching Characteristics in TiO₂/LaAlO₃Heterostructures Sandwiched in Pt Electrodes

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Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

Cited by 26 publications

References 27 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

Resistive Switching Characteristics in TiO2/LaAlO3Heterostructures Sandwiched in Pt Electrodes

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Resistive Switching Characteristics in TiO₂/LaAlO₃Heterostructures Sandwiched in Pt Electrodes