Investigation of the effect of large doses on the Si(Li) detector parameters

Abstract

The influence of 60Co γ‐rays and 3.5 MeV electrons on lithium‐doped silicon is investigated. An decrease of the “free lithium” concentration caused by the interaction between the lithium atoms and radiation inserted vacancies is observed. It is estimated that this process leads to the modification of the sensitive region of detectors, which manifests as an increase (or decrease) of the “compensation grade” and a change of the i‐regions sizes.