2017
DOI: 10.1109/tasc.2016.2630040
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Investigation of the Performance of NbN Superconducting HEB Mixers of Different Critical Temperatures

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Cited by 4 publications
(5 citation statements)
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“…With regard to , one also expects it to decrease with increasing the temperature because of the profile and the reduced LO power. The behavior in our case is qualitatively in line with the simulation reported in [34]. It would be really useful if one can run a numerical simulation to explain quantitatively the temperature dependence of and…”
Section: Temperature Dependence Of the Mixer Performancesupporting
confidence: 88%
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“…With regard to , one also expects it to decrease with increasing the temperature because of the profile and the reduced LO power. The behavior in our case is qualitatively in line with the simulation reported in [34]. It would be really useful if one can run a numerical simulation to explain quantitatively the temperature dependence of and…”
Section: Temperature Dependence Of the Mixer Performancesupporting
confidence: 88%
“…The π-band =1.8 meV and σ-band =6.3 meV of MgB2 were reported for a of 38.7 K [35], corresponding to the gap frequency of 0.87 THz and 3.05 THz, respectively. Assuming these two gap frequencies apply also to our HEB since the of our MgB2 film is 38.4 K and is nearly the same as in [34], one would expect a different pumped IV when it is at 5.3 THz, where the THz photons can break all the Cooper-pairs and can be uniformly absorbed within the thin, narrow MgB2 bridge, however, when it is at 1.6 THz, the photons can break the Cooper-pairs in the π-band and only those in σ-band, which locate in the middle of the bridge and have a relative high temperature when DC heat power is present, and the photons thus can be non-uniformly absorbed. Inset (b) in Figure 2 shows pumped IV curves at 1.6 THz and 5.3 THz measured at 5 K and 20 K, respectively, where the IV at 5.3 THz has a lower current than that at 1.6 THz at the low bias voltages.…”
Section: Double-gap Effect In Mgb2mentioning
confidence: 82%
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“…In addition, such calculations allow the interface characteristics to be determined from the measured T c [16,17].…”
Section: Introductionmentioning
confidence: 99%
“…30. In theory, one expects a decrease in T out by increasing the operating temperature based on the hotspot model, [31][32][33] because a bell-shaped electron temperature (T e ) profile along an HEB at a lower temperature becomes a flat one by increasing the temperature up to T c but simultaneously decreasing the LO power for the fixed bias point. The flat T e profile results in a lower effective T e in the center of the HEB, which in turn decreases T out since T out is dominated by the thermal fluctuation noise (/ T 2 e ).…”
Section: Table Imentioning
confidence: 99%