Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration

Abstract

In this study, we report on the realization of ultraviolet response enhancement in PV cells through the structure of ITO/SiO 2 / np-Silicon frame (named as SINP), which was fabricated by the state of the art processing. The fabrication process consists of thermal diffusion of phosphorus element into p-type texturized crystal Si wafer, thermal deposition of an ultra-thin silicon dioxide layer (15-20Å) at low temperature, and subsequent deposition of thick In 2 O 3 :SnO 2 (ITO) layer by RF sputtering. The structure, morphology, optical and electric properties of the ITO film were characterized by XRD, SEM, UV-VIS spectrophotometer and Hall effect measurement, respectively. The results showed that ITO film possesses high quality in terms of antireflection and electrode functions. The device parameters derived from current-voltage (I-V) relationship under different conditions, spectral response and responsivity of the ultraviolet photoelectric cell with SINP configuration were analyzed in detail. We found that the main feature of our PV cell is the enhanced ultraviolet response and optoelectronic conversion. The improved short-circuit current, open-circuit voltage, and filled factor indicate that the device is promising to be developed into an ultraviolet and blue enhanced photovoltaic device in the future. ITO, SINP photovoltaic device, current-voltage (I-V) characteristics, spectral response, responsivity Citation:He B, Ma Z Q, Zhao L, et al. Investigation of ultraviolet response enhanced PV cell with silicon-based SINP configuration.

An Ultraviolent-Enhanced Response Solar Cell and Tunneling Effect

“…The spectral responsivity peak of the violet SINP photoelectric cell is 487 mA/W at 800 nm, while the spectral responsivity peak of normal SINP photoelectric cell is 471 mA/W at about 860 nm. To theoretically estimate the increase scope of the IQE in the violet-blue wavelengths, a series of useful device parameters has been taken in the calculation [8]. The thickness of the base region is in the order of silicon wafer, normally about 200 µm.…”

“…The thickness of the base region is in the order of silicon wafer, normally about 200 µm. The width of the depletion region has been also calculated with a model of Piosson equation [8] and the maximum is about 0.5 µm. The width of emitter is from the front surface to the depth of the diffusion profile and is determined to be about 0.4 µm by ECV (Electric C-V) technique.…”