Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Feng, Boyuan; Li, Zhengcheng; Cheng, Feiyu; Xu, Leilei; Liu, Tong; Huang, Zhiwen; Li, Fangsen; Feng, Jiagui; Chen, Xiao; Wu, Ying; He, Guanghu; Ding, Sunan

doi:10.1002/pssa.202000457

Cited by 22 publications

(11 citation statements)

References 42 publications

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“…[ 38 ] This is because when twofold β‐Ga 2 O 3 is grown on c ‐plane sapphire, there exist three equivalent epitaxial relationships for each of the twofolds, resulting in the sixfold rotational symmetry. [ 39 ] A similar conclusion was also reported by Zhang et al [ 40 ] and Oshima et al [ 41 ] Compared with the β‐Ga 2 O 3 , the β‐(Al x Ga 1− x ) 2 O 3 films show the same in‐plane rotation relationship but different intensities of diffraction peaks. The intensity difference may be caused by the nonuniform rate of Al occupation on different β‐Ga 2 O 3 surfaces due to the discrepancy in formation energy.…”

Section: Resultssupporting

confidence: 81%

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

Feng

et al. 2021

Physica Status Solidi (a)

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Recently, β-Ga 2 O 3 has attracted extensive attention because of its ultrawide bandgap (%4.8 eV), [1,2] high theoretical breakdown electric field (E br ) (8 MV cm À1 ), [3,4] and higher Baliga figure of merit (BFOM) compared with GaN and SiC. The highly mature bulk growth and thin film deposition techniques [5][6][7] make both homo- [8][9][10] and heteroepitaxial [11,12] growth of Ga 2 O 3 thin films with controllable doping possible, [13][14][15][16] which is important for practical applications such as power switches, [17,18] high-efficiency devices, [19] and deep-UV photodetectors. [20,21] To develop and optimize modern electronic and optoelectronic devices with great flexibility, energy band engineering is necessary for designing and preparing barrier layers, which show better carrier confinement with larger band offsets in device structures. [22] It has been demonstrated that the bandgap of β-(Al x Ga 1Àx ) 2 O 3 depends on the Al composition (x), and increases with it. [23] Many works in the literature report the growth of β-(Al x Ga 1Àx ) 2 O 3 thin films using molecular beam epitaxy (MBE), [24][25][26] metal organic chemical vapor deposition (MOCVD), [27] pulsed laser deposition (PLD), [28] sputtering [29] and solution combustion synthesis, [30] etc., and studies on the Al incorporation effect on the surface morphology and crystalline quality, which are summarized in Table 1. β-(Al x Ga 1Àx ) 2 O 3 epitaxial film by MOCVD and MBE is mainly used for highpower electronic applications. For instance, by constructing a β-(Al x Ga 1Àx ) 2 O 3 /β-Ga 2 O 3 heterojunction with a Si delta-doped layer in β-(Al x Ga 1-x ) 2 O 3 to prepare a modulated doped field effect

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Section: Resultssupporting

confidence: 81%

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

Feng

et al. 2021

Physica Status Solidi (a)

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“…However, the β-Ga 2 O 3 films grown on β-Ga 2 O 3 and on sapphire show a dominant blue emission around 460 nm (2.7 eV) and 430 nm (2.88 eV) above and below bandgap, respectively. Similar observations were made in other reports for β-Ga 2 O 3 grown on sapphire showing a dominant emission around 440 nm (2.82 eV) 30 , 39 , 40 . The difference in dominant emission between samples of this series is likely due to extended defects ruling the emission of the PL found in epitaxial films.…”

Section: Resultssupporting

confidence: 92%

“…Along with multiple reports, including Ghadbeigi et al . which showed rotational domains 36 – 39 , TEM images of (-201) β-Ga 2 O 3 grown on sapphire revealed multiple extended defects in these types of samples 31 , 37 – 39 , 41 – 44 . Furthermore, Eisner et al .…”

Section: Resultsmentioning

confidence: 90%

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

Cooke

Ranga

Jesenovec

et al. 2022

Sci Rep

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In this work, a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum gallium oxide films and bulk single crystals is performed including comparing doping, epitaxial substrates, and aluminum concentration. It is observed that blue/green emission intensity strongly correlates with extended structural defects rather than the point defects frequently assumed. Bulk crystals or Si-doped films homoepitaxially grown on (010) β-Ga2O3 yield an intense dominant UV emission, while samples with extended structural defects, such as gallium oxide films grown on either (-201) β-Ga2O3 or sapphire, as well as thick aluminum gallium oxide films grown on either (010) β-Ga2O3 or sapphire, all show a very broad PL spectrum with intense dominant blue/green emission. PL differences between samples and the possible causes of these differences are analyzed. This work expands previous reports that have so far attributed blue and green emissions to point defects and shows that in the case of thin films, extended defects might have a prominent role in emission properties.

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“…Detailed experimental conditions can be found in the previous article. 37 The interdigital (IDT) patterned gold electrodes were deposited on the β-Ga 2 O 3 film by photolithography and thermal evaporation process. The width of the channel between the two IDT electrodes is 10 μm, and the width and length of the IDT electrodes are 50 and 500 μm, respectively.…”

Section: Methodsmentioning

confidence: 99%

High-Performance UV–Vis Broad-Spectra Photodetector Based on a β-Ga₂O₃/Au/MAPbBr₃ Sandwich Structure

Gong

Yan

Gao

et al. 2022

ACS Appl. Mater. Interfaces

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The UV−vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV−vis PDs. This severely affects the practical application of UV−vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga 2 O 3 , Au electrodes, and the MAPbBr 3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga 2 O 3 /Au/MAPbBr 3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W −1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal−semiconductor− metal (MSM) structure MAPbBr 3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga 2 O 3 and MAPbBr 3 , which gives the β-Ga 2 O 3 /Au/MAPbBr 3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV−visible region.

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Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Cited by 22 publications

References 42 publications

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

High-Performance UV–Vis Broad-Spectra Photodetector Based on a β-Ga₂O₃/Au/MAPbBr₃ Sandwich Structure

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Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Cited by 22 publications

References 42 publications

Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures

Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

High-Performance UV–Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3 Sandwich Structure

Contact Info

Product

Resources

About

Investigation of β‐Ga₂O₃ Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

High-Performance UV–Vis Broad-Spectra Photodetector Based on a β-Ga₂O₃/Au/MAPbBr₃ Sandwich Structure