Investigation on Intermittent Life Testing Program for IGBT

Cheng, Yu; Fu, Guicui; Jiang, Maogong; Xue, Peng

doi:10.6113/jpe.2017.17.3.811

Cited by 10 publications

(3 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, a survey based on over 200 products from 80 businesses found that 31% of respondents selected semiconductor-powered devices as the most fragile parts of power converters used for various power applications [11]. Furthermore, many research-ers have emphasized numerous IGBT-module-related research areas and proposed vari-ous techniques and analysis methods for the acceleration testing of these modules to es-timate failure modes in the early stages of the implementation process, such as the analy-sis of IGBT module fault causes presented in [12,13]; the various techniques of accelera-tion testing for fault diagnostic methodologies given in [14][15][16]; the analysis of parameters affecting failure modes in [17]; and the different measuring equipment used in the experimental environment for module fault diagnosis, such as a scanning electron microscope (SEM), X-ray, and an IR camera, as proposed in [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Estimation Technique for IGBT Module Junction Temperature in a High-Power Density Inverter

Okilly,

Choi,

Kwak

et al. 2023

Machines

View full text Add to dashboard Cite

During the last few decades, insulated-gate bipolar transistor (IGBT) power modules have evolved as reliable and useful electronic parts due to the increasing relevance of power inverters in power infrastructure, reliability enhancement, and long-life operation. Excessive temperature stresses caused by excessive power losses frequently cause high-power-density IGBT modules to fail. As a result, module temperature monitoring techniques are critical in designing and selecting IGBT modules for high-power-density applications to guarantee that temperature stresses in the various module components remain within the rated values. In this paper, a module’s different losses were estimated, a heating pipe system for the thermal power cycling technique was proposed, and finite element method (FEM) thermal modeling and module temperature measurement were performed using ANSYS Icepak software version 2022 R1 to determine whether the IGBT module’s temperature rise was within acceptable bounds. To test the proposed technique, a proposed design structure of the practical railway application with a 3.3 MW traction inverter is introduced using commercialized IGBT modules from Semikron company with maximum temperature of about 150 °C. the FEM analysis results showed that the maximum junction temperature is about 109 °C which is in acceptable ranges, confirming the appropriate selection of the employed IGBT module for the target application.

show abstract

Section: Introductionmentioning

confidence: 99%

Estimation Technique for IGBT Module Junction Temperature in a High-Power Density Inverter

Okilly,

Choi,

Kwak

et al. 2023

Machines

View full text Add to dashboard Cite

show abstract

“…As the operating temperature of the device increases, the life cycle will be shorter. Therefore, reducing the temperature of the device is an effective way to extend its life cycle [2,3].…”

Section: Introductionmentioning

confidence: 99%

Study on structure optimization of a dual IGBT module heat sink in a DC–DC converter under natural convection based on field synergy theory

Guang-yi

Zhang

Gao

2019

IEEJ Transactions Elec Engng

View full text Add to dashboard Cite

Aiming at the heat sink with dual insulated gate bipolar transistor (IGBT) modules in a direct current to direct current (DC-DC) converter, the calculation of the temperature field of the cooling structure with low power consumption is completed by using Icepak simulation software, and analysis of the influence of the two IGBT module installation distance on the maximum temperature. The simulation results show that the maximum temperature of two heat sources decreases with the installation distance, but the maximum decline is not more than 0.5 • C. Based on field synergy theory, it is found that the local structure of the heat sink is not conducive to the natural convection heat transfer. Therefore, the improved measures of slotting the plate are proposed, and the effectiveness of this measure to reduce the heat source temperature is verified by simulation analysis and experiment. The influence of slot size on the maximum temperature of heat source is analyzed: the maximum temperature of heat source decreases with the increase of slot size. When the slot size is 16 mm, the cooling effect is obvious, and the maximum temperature drop is up to 6 • C compared with that before the slotting. Besides, the slot processing can also reduce the heat sink material and reduce the weight.

show abstract

“…As power electronic equipment has come into widespread use, insulated gate bipolar transistor (IGBT) fully controlled power electronic devices, combining the facile drive of MOSFET with the low conduction loss of a bipolar junction transistor (BJT), and possess good switching performance, have found wide application in industrial automotive, traction, and solar inverter areas [ 1 , 2 , 3 ]. Therefore, knowing whether an IGBT is in a normal state is critical to the safe operation of the system [ 4 ]. Generally, the performance of a system may gradually decline as IGBTs contain numerous materials with different coefficients of thermal expansion (CTE) with many interfaces, which can wear out and cause overstress failures [ 5 ].…”

Section: Introductionmentioning

confidence: 99%

Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data

Liu

Mei

Zeng

et al. 2017

Sensors

View full text Add to dashboard Cite

The insulated gate bipolar transistor (IGBT) is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL) of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue in the field of IGBT reliability. The aim of this paper is to develop a prognostic technique for estimating IGBTs’ RUL. There is a need for an efficient prognostic algorithm that is able to support in-situ decision-making. In this paper, a novel prediction model with a complete structure based on optimally pruned extreme learning machine (OPELM) and Volterra series is proposed to track the IGBT’s degradation trace and estimate its RUL; we refer to this model as Volterra k-nearest neighbor OPELM prediction (VKOPP) model. This model uses the minimum entropy rate method and Volterra series to reconstruct phase space for IGBTs’ ageing samples, and a new weight update algorithm, which can effectively reduce the influence of the outliers and noises, is utilized to establish the VKOPP network; then a combination of the k-nearest neighbor method (KNN) and least squares estimation (LSE) method is used to calculate the output weights of OPELM and predict the RUL of the IGBT. The prognostic results show that the proposed approach can predict the RUL of IGBT modules with small error and achieve higher prediction precision and lower time cost than some classic prediction approaches.

show abstract

Investigation on Intermittent Life Testing Program for IGBT

Cited by 10 publications

References 23 publications

Estimation Technique for IGBT Module Junction Temperature in a High-Power Density Inverter

Estimation Technique for IGBT Module Junction Temperature in a High-Power Density Inverter

Study on structure optimization of a dual IGBT module heat sink in a DC–DC converter under natural convection based on field synergy theory

Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data

Contact Info

Product

Resources

About