2008
DOI: 10.1016/j.matlet.2008.03.013
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Investigation on Mn doped ZnO thin films grown by RF magnetron sputtering

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Cited by 36 publications
(12 citation statements)
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“…This can be explained by the ferromagneticantiferromagnetic competition, saying that at higher concentrations may be ascribed to an increasing occurrence of antiferromagnetic coupling for Mn pairs happening at shorter separation distances, leading to a decreasing the ferromagnetic interaction, which was reported in the literature previously also [38,50,61].…”
Section: Resultsmentioning
confidence: 56%
“…This can be explained by the ferromagneticantiferromagnetic competition, saying that at higher concentrations may be ascribed to an increasing occurrence of antiferromagnetic coupling for Mn pairs happening at shorter separation distances, leading to a decreasing the ferromagnetic interaction, which was reported in the literature previously also [38,50,61].…”
Section: Resultsmentioning
confidence: 56%
“…The hysteresis loops in Figures 1 and 3 indicate the presence of ferromagnetism in the Mn:ZnO and Cu:ZnO films. Although FM has been predicted and observed experimentally in Mn:ZnO, a discord exists in the reported justifications [25,26]. Likewise, the origins of ferromagnetism in Cu:ZnO remain unidentified as neither Cu nor ZnO is intrinsically magnetic, meaning that one defect type must exist to induce the magnetic moments and another to mediate them.…”
Section: Resultsmentioning
confidence: 99%
“…Doppler broadening of PAS measurements was performed using monoenergetic positron beams in the 0.2 keV to 30 keV range at the positron facility Helmholtz-Zentrum Dresden-Rossendorf (HZDR) in Dresden, Germany. The 511 keV annihilation peak for each beam energy was recorded using a high purity Ge detector, and the S and W defect parameters [25] were obtained from the annihilation peak. The structural and optical properties of the Al-Co:ZnO sample, X-ray diffraction (XRD), and ultraviolet-visible (UV-VIS) spectroscopic measurements were carried out at room temperature.…”
Section: Methodsmentioning
confidence: 99%
“…35 The 4.0 at.% Mn-doped ZnO film has the highest saturation magnetization because the distance between Mn 2+ ions is optimized, which induces an adequate exchange interaction so as to enhance the magnetization. 36,37 Furthermore, the carrier concentrations and magnetizations decrease with increasing Mn concentration. Thus, ferromagnetism in Mn-doped ZnO film can be expected in terms of carrier-mediated exchange coupling between the localized spins of the transition-metal ions.…”
Section: Magnetic Propertiesmentioning
confidence: 99%