Investigation on the Effect of the Substrate Temperature on the Photoelectric Properties of the Ga Doped ZnO Film

Abstract

The Ga doped ZnO film (GZO) was fabricated via magnetron sputtering on the substrate of silica glass. The effect of substrate temperature on the photoelectric properties of GZO film, such as morphology, grain size, crystal structure and transparency was studied. The results showed us that the crystallinity of GZO film was improved by increasing the substrate temperature . The GZO film exhibited high transmittance (above 80% in the visible region) at the substrate temperature higher than 200°C. The lowest resistivity of 4.45×10-4Ω·cm and highest hall mobility of 11.7 cm2 v-1s-1 were obtained when the substrate temperature was 300°C.

Inducing the Effect of a Ga2O3 Nano-Particle on the CsF-RbF-AlF3 Flux for Brazing Aluminum to Carbon Steels

“…When the gravity was larger than the molten flux, as shown in Table 2, the Ga 2 O 3 particle settled from molten flux freely to the molten filler metal surface. According to the result of the thermodynamic calculation shown in Table 1, it was found that the Ga 2 O 3 particle released Ga atoms by reacting with the Zn-Al alloy, where Ga was surface active, and could enrich the surface of filler metal to decrease its interfacial tension between metals (σ' s−l < σ s−l ) [15]: Considering the activity of molten Zn-2Al filler metal, Ga could be released and tested to demonstrate its release from Ga 2 O 3 . Due to having a similar property to Al [16], Ga permeated in the molten filler metal spontaneously.…”

“…It was concluded that the main reactions between the CsF-RbF-AlF 3 -Ga 2 O 3 flux and surface compounds on the base metal could be described as Equations (3)- (15). Due to the formation of active substances-SiF 6 2− , HF, and F − -the molten flux cleaned up the surface oxidation over AA5052, and active Al in the filler metal and enriched P removed the iron oxidation over Q235 steel.…”