*Investigation on the formation of titanium nitride thin films on 304 type stainless steel using plasma focus device

Fani, Narges; Savaloni, Hadi

doi:10.1186/2251-7235-6-30

Cited by 10 publications

(5 citation statements)

References 48 publications

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“…Regarding the as-deposited TiN thin films on quartz, only the (200) plane was observed, in accordance with previous reports. , After irradiation, the diffraction patterns of the TiN thin films on quartz showed a characteristic peak at 44°, − identified as the (200) plane, − but with lower intensity than the as-deposited TiN thin films on quartz (Figure ). Interestingly, the irradiated TiN thin films on quartz reveal a peak with a high intensity at 40°, identified as the (111) plane.…”

Section: Resultssupporting

confidence: 90%

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Akhtanova,

Yerlanuly,

Parkhomenko

et al. 2023

ACS Omega

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In this contribution, we investigated the properties of magnetron-sputtered TiN thin films on sapphire and quartz substrates before and after 5 MeV electron irradiation with a fluence of 7 × 1013 e/cm2. Structural, morphological, optical, and electrical properties were analyzed to observe the impact of electron irradiation on the TiN thin films. The results showed improved electrical properties of the TiN thin films due to high-energy electron irradiation, resulting in increased specific conductivity compared to the as-deposited thin films on both sapphire and quartz substrates. The structural features of the TiN thin films on the sapphire substrate transformed from polycrystalline to amorphous, while the TiN thin films deposited on the quartz substrate remained unchanged. Chemical state analysis indicated changes in the metallic bonding between Ti and N in the deposited TiN on the sapphire substrate, while TiN deposited on the quartz substrate retained its Ti–N bonding. This study provides insights into the effects of electron irradiation on TiN thin films, emphasizing the importance of investigating radiation resistance for the reliable operation of optoelectronic devices and photovoltaic systems in extreme ionizing radiation environments.

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Section: Resultssupporting

confidence: 90%

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Akhtanova,

Yerlanuly,

Parkhomenko

et al. 2023

ACS Omega

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“…TiN has metal-like characteristics having low resistivity, high mechanical hardness, as well as good wear resistance, and high corrosion resistance; 20,21 these properties have many applications, such as protective coatings on mechanical parts and anti-reflective coatings. [22][23][24] TiN has many applications in microelectronics, such as diffusion barrier layer, gate materials, adhesive layer, and Schottky barrier contacts. 22,25,26 Based on the properties of TiN, such as its CMOS compatibility, biocompatibility, durability, and robustness for a wide pH range and thus, it is suitable for chemical/ biochemical sensing and in-vivo monitoring applications.…”

mentioning

confidence: 99%

Titanium Nitride Sensing Film-Based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications

Kumar

Jit

Sinha

et al. 2021

J. Electrochem. Soc.

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Extended-Gate Field-Effect Transistor (EGFET)-based pH sensors are cost-effective alternatives to well-established Ion-Sensitive Field-Effect Transistor (ISFET) technology for chemical/biochemical sensing applications. In this work, a ∼70 nm thin sensing film of Titanium Nitride (TiN) was deposited on Indium-Tin Oxide (ITO)-coated glass substrate using a pulsed-DC magnetron-assisted reactive sputtering technique to fabricate EGFET electrode. TiN-EGFET sensor electrode was electrically connected to the gate terminal of a commercial MOSFET (MC14007UBCP) to constitute an EGFET pH sensing platform, which was tested using pH buffer solutions of pH range 2–12 (at 35 °C) and its sensitivity was found to be ∼61 mV/pH. TiN-EGFET devices have a fast and linear response in the pH range 2–12. Drift analysis of the sensor was also performed for 10 min in each pH buffer solution of pH = 2, 4, 7, 10, 12; where a low-drift of about 0.5 μA min−1 has been obtained for the pH range of 2–10 and a hysteresis response of nearly 10 μA has been obtained for pH cycle 7 → 10 → 7 → 4 → 7. The repeatability of the sensor was studied for seven days, where a stable response was recorded in each of the pH buffer solutions, which confirms the repeatability and reliability of the TiN-EGFET sensor.

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“…This confirms that more uniform and smooth films are deposited at lower ion energy flux (10 • angular position) as revealed in SEM results. Fani and Savaloni synthesized the TiN film using DPF and found that the roughness decreases with increasing angular position (15). The AFM micrographs of the films deposited at 10 • angular position are shown in Figure 8.…”

Section: Resultsmentioning

confidence: 97%

“…Masugata et al proposed that the ion beam pulse emitted from DPF can be used for surface treatment on semiconductors (14). The DPF device has been used earlier for the synthesis of different films such as TiN, TiN/a-Si 3 N 4 , and (Ti,Al)N/a-Si 3 N 4 (11,(15)(16)(17)(18)(19)(20). However, it is significant to mention that we have used DPF first time for the synthesis of the TiN/Ni 3 N/a-Si 3 N 4 thin film.…”

Section: Introductionmentioning

confidence: 93%

Synthesis of composite TiN/Ni₃N/a-Si₃N₄thin films using the plasma focus device

Umar

Ahmad

Khan

et al. 2013

Radiation Effects and Defects in Solids

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Composite films of TiN/Ni 3 N/a-Si 3 N 4 were synthesized using the Mather-type plasma focus device with varying numbers of focus deposition shots (5, 15, and 25) at 0 • and 10 • angular positions. The composition and structural analysis of these films were analyzed by using Rutherford backscattering (RBS) and X-ray diffraction (XRD). Scanning electron microscope and atomic force microscope were used to study the surface morphology of films. XRD patterns confirm the formation of composite TiN/Ni 3 N/a-Si 3 N 4 films. The crystallite size of TiN (200) plane is 11 and 22 nm, respectively, at 0 • and 10 • angular positions for same 25 focus deposition shots. Impurity levels and thickness were measured using RBS. Scanning electron microscopy results show the formation of net-like structures for multiple focus shots (5, 15, and 25) at angular positions of 0 • and 10 • . The average surface roughness of the deposited films increases with increasing focus shots. The roughness of the film decreases at higher angle 10 • and the films obtained are smoother as compared with the films deposited at 0 • angular positions.

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*Investigation on the formation of titanium nitride thin films on 304 type stainless steel using plasma focus device

Cited by 10 publications

References 48 publications

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Titanium Nitride Sensing Film-Based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications

Synthesis of composite TiN/Ni₃N/a-Si₃N₄thin films using the plasma focus device

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*Investigation on the formation of titanium nitride thin films on 304 type stainless steel using plasma focus device

Cited by 10 publications

References 48 publications

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

Titanium Nitride Sensing Film-Based Extended-Gate Field-Effect Transistor for Chemical/Biochemical Sensing Applications

Synthesis of composite TiN/Ni3N/a-Si3N4thin films using the plasma focus device

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Synthesis of composite TiN/Ni₃N/a-Si₃N₄thin films using the plasma focus device