Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

Du, Sichao; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1088/0268-1242/25/5/055014

Cited by 12 publications

(13 citation statements)

References 27 publications

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“…2,3 The process steps associated with the QWI are generally simple in comparison with the asymmetric twin-waveguide (ATG) 4 approach to PICs, where delicate taper designs are required to transfer light in the vertical plane or with the epitaxial regrowth approach where regrowth 5 with Al containing materials is difficult. Among the various intermixing methods, the top surface being encapsulated with a dielectric film prior to thermal annealing [6][7][8][9][10][11][12] is advantageous since it does not require sacrificial layers or external atoms and thus potential additional damage to the quantum well (QW) structure can be minimized. In this intermixing scenario, the creation and diffusion of vacancies created at the interface of the dielectric film and semiconductor top layer 6 are a prerequisite and those point defects may in turn cause the inbuilt strain within QW to be relaxed through the atomic interdiffusion.…”

Section: Sin X -Induced Intermixing In Alingaas/inp Quantum Well Thromentioning

confidence: 99%

“…It is then possible to control the extent of the bandgap shift by properly choosing the dielectric capping layers and the annealing conditions including temperature and duration. [7][8][9] Different dielectric films such as SiO 2 , SiN x , SrF 2 , and TiO 2 have been demonstrated to induce or prevent the intermixing in diverse quantum well structures. Besides, the intermixing mechanism on different material systems has been investigated and can be ascribed to the disordering of different atoms.…”

Section: Sin X -Induced Intermixing In Alingaas/inp Quantum Well Thromentioning

confidence: 99%

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SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

Lee

Thomas

Gocalinska

et al. 2012

Journal of Applied Physics

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We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN x dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift. V C 2012 American Institute of Physics.

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Section: Sin X -Induced Intermixing In Alingaas/inp Quantum Well Thromentioning

confidence: 99%

Section: Sin X -Induced Intermixing In Alingaas/inp Quantum Well Thromentioning

confidence: 99%

SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

Lee

Thomas

Gocalinska

et al. 2012

Journal of Applied Physics

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“…In this work, we report an IFVD method using bilayer dielectric capping and extended time annealing at relatively low annealing temperatures compared to the previous reports 8,11,13,16,17,[20][21][22] . SiO 2 layer was used for enhanced intermixing and Si x O 2 /SrF 2 bilayer was developed for intermixing suppression.…”

Section: Introductionmentioning

confidence: 98%

“…QWI involves interdiffusion of the atoms across the QW to modify its material composition and create a larger bandgap. This can be achieved by impurity induced disordering, laser-induced intermixing and impurity-free vacancy disordering (IFVD) [7][8][9][10][11] . Among these, IFVD has been the most promising intermixing approach since it does not introduce additional impurities and hence eliminates free carrier absorption losses and, in the ideal case, preserves epitaxial quality.…”

Section: Introductionmentioning

confidence: 99%

IFVD-based large intermixing selectivity window process for high power laser diodes

Arslan

Şahin

Demir

et al. 2018

Semiconductor Lasers and Laser Dynamics VIII

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Catastrophic optical mirror damage (COMD) is a key issue in semiconductor lasers and it is initiated by facet heating because of optical absorption. To reduce optical absorption, the most promising method is to form non-absorbing mirror structures at the facets by obtaining larger bandgap through impurity-free vacancy disordering (IFVD). To apply an IFVD process while fabricating high-power laser diodes, intermixing window and intermixing suppression regions are needed. Increasing the bandgap difference (ΔE) between these regions improves the laser lifetime. In this report, SrF 2 (versus Si x O 2 /SrF 2 bilayer) and SiO 2 dielectric films are used to suppress and enhance the intermixing, respectively. However, defects are formed during the annealing process of single layer SrF 2 causing detrimental effects on the semiconductor laser performance. As an alternative method, Si x O 2 /S r F 2 bilayer films with a thin Si x O 2 dielectric layer is employed to obtain high epitaxial quality during annealing with small penalty on the suppression effect. We demonstrate record large ΔE of 125 meV. Broad area laser diodes were fabricated by the IFVD process. Fabricated high-power semiconductor lasers demonstrated conservation of quantum efficiency with high intermixing selectivity. The differential quantum efficiencies are 81%, 74%, 66% and 46% for as grown, bilayer protected, SrF 2 protected and QWI lasers, respectively. High power laser diodes using bilayer dielectric films outperformed single-layer based approach in terms of the fundamental operational parameters of lasers. Comparable results obtained for the as-grown and annealed bilayer protected lasers promises a novel method to fabricate high power laser diodes with superior performance and reliability.

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“…Intermixing in the active region can be achieved by several methods such as ion implantation, 4,5 impurity induced disordering (IID), 6,7 or using dielectric capping layers such as SiO 2 , in impurity-free vacancy disordering (IFVD). [8][9][10][11][12] Quantum well intermixing (QWI) using IFVD technique is one of the simplest methods of modifying the bandgap in quantum well structures. IFVD is accomplished by coating the semiconductor samples (such as GaAs) with a dielectric layer such as silicon and then performing a thermal annealing.…”

mentioning

confidence: 99%

Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures

Gareso

Tan

Jagadish

2017

ECS J. Solid State Sci. Technol.

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Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of InGaAs/InGaAs quantum well laser structures using double-crystal X-ray diffraction (DCXRD) and photoluminescence measurements. X-ray measurements showed that some part of the carbon was electrically activated after annealing without a dielectric capping layer, but not after annealing with a TiO2 capping layer. For a SiO2 capping layer, the tensile peak was still observed after annealing which is comparable to the samples annealed without capping layer. Photoluminescence results showed that a large energy shift was observed when the samples were coated with SiO2. A negligible photoluminescence shift was observed after annealing when the samples coated with TiO2.

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Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

Cited by 12 publications

References 27 publications

SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

IFVD-based large intermixing selectivity window process for high power laser diodes

Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures

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