Investigations on Au, Ag, and Al schottky diodes on liquid encapsulated czochralski grown n-GaAs〈100〉

Arulkumaran, S.; Arokiaraj, J.; Udhayasankar, M.; Santhanaraghavan, P.; Kumar, J.; Ramasamy, P.

doi:10.1007/bf02653329

Cited by 5 publications

(4 citation statements)

References 13 publications

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“…These obtained barrier height values are higher than obtained from I-V measurements for corresponding to each alloy composition. Arulkumaran et al prepared Au/n-GaAs and Ag/n-GaAs SDs and barrier height values varied from 0.82-0.93 eV and from 0.75-1.05 eV, respectively [44]. Also, barrier height found here were reasonable agreement with a value of 0.97 eV from C-V characteristics of Au/n-GaAs and Ag/n-GaAs of nearly the same doping concentration [15].…”

Section: C-v Characteristics Of the Au-ag/n-gaas Sdsupporting

confidence: 80%

Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

Akkaya

2021

J Mater Sci: Mater Electron

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In this study, I investigated the effect of work function (ϕm) of AuxAg1-x (x=0, 0.22, 0.37, 0.71 and 1) on the Au-Ag/n-GaAs Schottky diode (SD) parameters. Ag, Au and three alloys with different compositions deposited on n-GaAs substrates by thermal evaporation method. Surface morphologies of the samples were investigated by atomic force microscope (AFM). Elementel compositions of Schottky metals were conducted by the energy dispersive X-ray spectroscop (EDX). Current-voltage (I-V) and capacitance-voltage (C-V) measurements performed at room temperature.SD parameters such as barrier height (Φb0), ideality factor (n), series resistance (Rs), and interface state density (Dit) of the SD's were calculated from the obtained I-V and C-V data. Experimental results showed that all calculated SD parameters depends on alloy composition. Lowest mean barrier height value was found as 0.789±0.022 eV for Au/n-GaAs SDs and the highest value was determined 0.847±0.008 eV for Au0.71Ag0.29/n-GaAs SDs from I-V measurements. Weak dependencies of barrier height to ϕm was exist and gap state parameter (S) determined as 0.0526. S value was close to the Bardeen limit (S=0), and indicates that Fermi level was strongly pinned in Au-Ag/n-GaAs SDs. Also, main SD parameters like series resistance (Rs), ideality factor (n), reverse bias barrier height (Φb RB ), doping density (Nd) and density of interface states (Dit) were calculated via using different methods from I-V and C-V measurement results. In addition, to determine the leakage current mechanism Poole-Frenkel emission (PFE) and Schottky emission (SE) models applied on reverse bias I-V data.

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Section: C-v Characteristics Of the Au-ag/n-gaas Sdsupporting

confidence: 80%

Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

Akkaya

2021

J Mater Sci: Mater Electron

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“…Since the observed built-in voltage of 0.58 V corresponding to diode 2 is not consistent with an Au−GaAs Schottky contact (0.9 V), we hypothesize that the observed rectifying behavior results from a conduction band energy barrier within the nanowire caused by a midgap Fermi level pinned near the Au nanoparticle (see Supporting Information). In this model, diode 2 results from a conduction band energy barrier caused by the difference between the conduction band of the GaAs under contact A and contact B, while diodes 1 and 3 result from the annealed NiGeAu contacts with similar ideality factors and built-in voltages.…”

mentioning

confidence: 96%

“…First, a thin film of n-GaAs was deposited on a GaAs (100)B substrate as a control, and the resulting n-GaAs film exhibited a donor concentration of 3 × 10 17 cm -3 (see Supporting Information), indicating that the MOCVD reactor growth conditions were not causing the observed rectification. Next, the presence of a Schottky contact was ruled out because all three contacts in Figure 2b, including the ones not showing the rectifying behavior, are identical, and the measured built-in voltage of 0.6 V is lower than the Au-GaAs barrier height of 0.9 V. 31 Finally, the gradual decrease of the nanowire shell thickness close to the Au particle was also dismissed as a possible cause for the observed rectifying behavior because contact A was designed to extend far enough past the Au nanoparticle to contact the shell at its largest thickness. Taken together, these data indicate that the electrical properties and the effective doping of the nanowire vary near the Au seed nanoparticle.…”

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confidence: 99%

Effects of Gold Diffusion on n-Type Doping of GaAs Nanowires

2010

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The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

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“…The background ion impurity density of the used wafer has been measured to be N = 4.3 × 10 21 m −3 from mobility measurements on a two-dimensional electron gas grown in the molecular beam epitaxy chamber. From this number we can calculate the typical length scale of the surface induced electric field into the GaAs as [36] d = 2V b ǫ 0 ǫ d /(e 2 N ) = 462 − 580 nm , where V b = 0.71 − 1.12 eV is the barrier height [37], e is the elementary charge, and ǫ d is the permittivity of GaAs. Thus any resulting surface electric field would extend 5-6 times further than the length over which we observe deviations from dipole theory, and we can therefore rule out the Stark effect as explanation of our data.…”

mentioning

confidence: 99%

Strongly modified plasmon–matter interaction with mesoscopic quantum emitters

Andersen

Stobbe

Sørensen³

et al. 2010

Nature Phys

211

189

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Semiconductor quantum dots (QDs) provide an essential link between light and matter in emerging fields such as light-harvesting [1,2], all-solid-state quantum communication [3], and quantum computing [4]. QDs are excellent single-photon sources [5] and can store quantum bits for extended periods [6] making them promising interconnects between light and matter in integrated quantum information networks [7]. To this end the light-matter interaction strength must be strongly enhanced using nanophotonic structures such as photonic crystal cavities [8] and waveguides [9] or plasmonic nanowires [10][11][12][13]. So far it has been assumed that QDs can be treated just like atomic photon emitters where the spatial properties of the wavefunction can be safely ignored. Here we demonstrate that the point-emitter description for QDs near plasmonic nanostructures breaks down. We observe that the QDs can excite plasmons eight times more efficiently depending on their orientation due to their mesoscopic character. Either enhancement or suppresion of the rate of plasmon excitation is observed depending on the geometry of the plasmonic nanostructure in full agreement with a new theory. This discovery has no equivalence in atomic systems and paves the way for novel nanophotonic devices that exploit the extended size of QDs as a resource for increasing the light-matter interaction strength.

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Investigations on Au, Ag, and Al schottky diodes on liquid encapsulated czochralski grown n-GaAs〈100〉

Cited by 5 publications

References 13 publications

Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height

Effects of Gold Diffusion on n-Type Doping of GaAs Nanowires

Strongly modified plasmon–matter interaction with mesoscopic quantum emitters

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