(Invited) In Memoriam Ulrich Gösele: Wafer Bonding à la Carte

Abstract

The modern day wafer bonding is inspired by the pioneering work of Prof. Dr. Ulrich Gösele in science and technology of direct bonding. Gösele's research helped in understanding of the fundamental mechanisms and thus revealing the technological interest of this technology. The paper reviews the results of basic studies in the area of wafer direct bonding of semiconductor and ferroelectric materials. Recent advances of the wafer bonding technology for the fabrication of advanced engineered substrates and 3D stacking are discussed.

Optically pumped VECSELs: review of technology and progress

“…Finally, the wafer bonding can also be carried out with clean surfaces that are free of adsorbents, but such conditions can only be realized in an ultra-high vacuum (UHV). All these direct bonding methods have been applied to III-V semiconductors [156][157][158][159][160], although hydrophilic bonding of III-V semiconductors can be problematic, since their surfaces are prone to roughening upon wet chemical cleaning and the III-V oxides tend to be unstable [161,162].…”