(Invited) Leakage Current Reduction in ALD-Al<sub>2</sub>O<sub>3</sub> Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing

Yoshitsugu, Koji; Horita, Masahiro; Ishikawa, Yasuaki; Uraoka, Yukiharu

doi:10.1149/06701.0205ecst

Cited by 6 publications

(6 citation statements)

References 9 publications

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“…We think that moisture can become a hydrogen source under high pressure and temperature. 24) No oxygen incorporation was observed (below the detection limit of 10 16 cm −3 ). Interstitial H (H i ) in GaN has two charge states, namely negative (H i -) and positive (H i + ), in the bandgap.…”

mentioning

confidence: 96%

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Narita

Sakurai

Boćkowski

et al. 2019

Appl. Phys. Express

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To investigate Mg diffusion during ultra-high-pressure annealing, which activates Mg acceptors in GaN, GaN samples with p–n junctions prepared via epitaxial growth were annealed at 1573 K under 1 GPa. The profiles of Mg diffusion toward the underlying n-type layer cannot be explained by a simple diffusion model. We found that H atoms diffused along with Mg atoms. By considering the suppressed diffusion of positively charged interstitial H atoms due to the electric field in the depletion layer, we could better reproduce the Mg–H diffusion profiles, suggesting that H atoms play a key role in the Mg diffusion process.

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mentioning

confidence: 96%

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Narita

Sakurai

Boćkowski

et al. 2019

Appl. Phys. Express

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“…Figure S3 of the Supporting Information shows the TZDB histogram plotted as a function of the breakdown field. In the statistical results of the TZDB test, three modes, called A-, B-, and C-modes, were observed when the breakdown fields were composed of low (<1 MV/cm), intermediate, and high fields (>14 MV/cm), respectively . The A- and B-mode failures can be attributed to localized defect spots, such as Cu + ion transport, and categorized as extrinsic breakdown.…”

Section: Resultsmentioning

confidence: 99%

“…In the J−E curves, the In the statistical results of the TZDB test, three modes, called A-, B-, and Cmodes, were observed when the breakdown fields were composed of low (<1 MV/cm), intermediate, and high fields (>14 MV/cm), respectively. 32 The A-and B-mode failures can be attributed to localized defect spots, such as Cu + ion transport, and categorized as extrinsic breakdown. The Cmode failure corresponds to the almost defect-free oxide sample and is categorized as intrinsic breakdown.…”

Section: Resultsmentioning

confidence: 99%

Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect

Kwon

et al. 2019

ACS Appl. Mater. Interfaces

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The size of the advanced Cu interconnects has been significantly reduced, reaching the current 7.0 nm node technology and below. With the relentless scaling-down of microelectronic devices, the advanced Cu interconnects thus requires an ultrathin and reliable diffusion barrier layer to prevent Cu diffusion into the surrounding dielectric. In this paper, amorphous carbon (a-C) layers of 0.75–2.5 nm thickness have been studied for use as copper diffusion barriers. The barrier performance and thermal stability of the a-C layers were evaluated by annealing Cu/SiO2/Si metal-oxide-semiconductor (MOS) samples with and without an a-C diffusion barrier at 400 °C for 10 h. Microstructure and elemental analysis performed by transmission electron microscopy (TEM) and secondary ion mass spectroscopy showed that no Cu diffusion into the SiO2 layer occurred in the presence of the a-C barrier layer. However, current density-electric field and capacitance–voltage measurements showed that 0.75 and 2.5 nm thick a-C barriers behave differently because of different microstructures being formed in each thickness after annealing. The presence of the 0.75 nm thick a-C barrier layer considerably improved the reliability of the fabricated MOS samples. In contrast, the reliability of MOS samples with a 2.5 nm thick a-C barrier was degraded by sp2 clustering and microstructural change from amorphous phase to nanocrystalline state during annealing. These results were confirmed by Raman spectroscopy, X-ray photoelectron spectroscopy and TEM analysis. This study provides evidence that an 0.75 nm thick a-C layer is a reliable diffusion barrier.

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“…To improve the discussion, we compared our results with works that used chemical and thermal treatments to enhance the electrical properties of the following structures Al 2 O 3 /Si and TiO 2 /Al 2 O 3 /Si. Yoshitsugu et al [76] deposited Al 2 O 3 (25.2 nm) on Si by PEALD at a fixed temperature of the 100 • C and RF power at 400 W. They used high-pressure deuterium oxide annealing (HPDOA) treatment and reduced the leakage current density to an order of 10 −7 A/cm 2 . This result is two orders of magnitude lower than our results.…”

Section: Nanomaterials 2020 10 X For Peer Review 13 Of 22mentioning

confidence: 99%

MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion

et al. 2020

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In this paper, we report the plasma-enhanced atomic layer deposition (PEALD) of TiO2 and TiO2/Al2O3 nanolaminate films on p-Si(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. In the PEALD process, we used titanium tetraisopropoxide (TTIP) as a titanium precursor, trimethyl aluminum (TMA) as an aluminum precursor and O2 plasma as an oxidant, keeping the process temperature at 250 °C. The effects of PEALD process parameters, such as RF power, substrate exposure mode (direct or remote plasma exposure) and Al2O3 partial-monolayer insertion (generating a nanolaminate structure) on the physical and chemical properties of the TiO2 films were investigated by Rutherford backscattering spectroscopy (RBS), Raman spectroscopy, grazing incidence X-ray diffraction (GIXRD), and field emission scanning electron microscopy (FESEM) techniques. The MOS capacitor structures were fabricated by evaporation of Al gates through mechanical mask on PEALD TiO2 thin film, followed by evaporation of an Al layer on the back side of the Si substrate. The capacitors were characterized by current density-voltage (J-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Our results indicate that RF power and exposure mode promoted significant modifications on the characteristics of the PEALD TiO2 films, while the insertion of Al2O3 partial monolayers allows the synthesis of TiO2/Al2O3 nanolaminate with well-spaced crystalline TiO2 grains in an amorphous structure. The electrical characterization of the MOS structures evidenced a significant leakage current in the accumulation region in the PEALD TiO2 films, which could be reduced by the addition of partial-monolayers of Al2O3 in the bulk of TiO2 films or by reducing RF power.

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(Invited) Leakage Current Reduction in ALD-Al₂O₃ Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing

Cited by 6 publications

References 9 publications

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect

MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion

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(Invited) Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing

Cited by 6 publications

References 9 publications

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect

MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion

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(Invited) Leakage Current Reduction in ALD-Al₂O₃ Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing