(Invited) Medium-Voltage SiC Devices for Next Generation of Power Conversion

Ghandi, Reza; Hitchcock, Collin; Kennerly, Stacey

doi:10.1149/10407.0067ecst

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…Subsequent processing resulted in vertical p-n SJ diodes. Details of the diode fabrication and performance can be found elsewhere in these proceedings [9].…”

Section: Experimental Samplesmentioning

confidence: 99%

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants

Hitchcock¹,

Ghandi²,

Deeb³

et al. 2022

MSF

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MeV level aluminum implants into 4H-SiC were performed as part of superjunction diode fabrication. Measurement of resistance test structures produced resistivities well above expected values with large decreases at elevated temperatures. Capacitance-voltage measurements indicate a high activation rate of the implanted aluminum. Temperature dependent Hall measurements produce reasonable hole mobilities with acceptor ionization energies of approximately 330meV, well above the 200meV expected for low concentration aluminum doping in 4H-SiC.

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“…Subsequent processing resulted in vertical p-n SJ diodes. Details of the diode fabrication and performance can be found elsewhere in these proceedings [9].…”

Section: Experimental Samplesmentioning

confidence: 99%

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants

Hitchcock¹,

Ghandi²,

Deeb³

et al. 2022

MSF

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“…Power devices with higher performance and higher efficiency are desired to realize a carbon-neutral society, and devices using wide bandgap semiconductors, such as SiC and GaN, are being developed. [1][2][3][4][5][6][7][8] Power devices that use wide bandgap semiconductors can operate at temperatures higher than those of conventional Si power devices, and power devices that operate in an operating environment of 200 °C-250 °C are being developed in the automotive field with benefits such as downsizing of the cooling system. [9][10][11] Furthermore, it is expected to operate in high-temperature environments exceeding 500 °C in aircraft, space-related fields, gas and oil mining/underground exploration, nuclear equipment, etc.…”

Section: Introductionmentioning

confidence: 99%

High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere

Koshiba¹,

Iizuka²,

Tatsumi³

2023

Jpn. J. Appl. Phys.

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Next-generation power devices using wide bandgap semiconductors, such as SiC, are expected to operate at higher temperatures than conventional Si power devices, and their operating temperatures are expected to exceed 250 °C. We developed a novel high-temperature resistant interconnection technology for die-bonding of SiC power devices using Ni nanoparticles and Al microparticles composite paste. The bond strength of the Al-metallized Si chip to Ni- metallized direct bonded copper substrate was evaluated using shear tests. The initial shear strength of samples from pressureless sintering at 350 °C for 15 min in the air exceeded 30 MPa. Furthermore, no significant degradation was observed in a high-temperature storage test at 250 °C for 1000 h.

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“…Such a system has been developed at the Tandem Van de Graaff accelerator facility at Brookhaven National Laboratory with the capability of multi-steps high energy implantation at energies up to 150 MeV [3]. By employing such a system, medium voltage charge balance devices and 2 kV superjunction structure PIN diode have been demonstrated [6,7]. Implantation employing high energy ions can create lattice strain in the epilayer by displacing the host atoms.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography

Chen

Liu

Peng

et al. 2023

DDF

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A novel high energy implantation system has been successfully developed to fabricate 4H-SiC superjunction devices for medium and high voltages via implantation of dopant atoms with multi-energy ranging from 13 to 66 MeV to depths up to 12um. Since the level of energies used is significantly higher than those employed for conventional implantation, lattice damage caused by such implantation must be characterized in detail to enhance the understanding of the nature of the damage. In regard to this, by employing the novel high energy system, 4H-SiC wafers with 12μm thick epilayers were blanket implanted by Al atoms at energies ranging from 13.8MeV to 65.7MeV and N atoms at energies ranging up to 42.99MeV. The lattice damages induced by the implantation were primarily characterized by Synchrotron X-ray Plane Wave Topography (SXPWT). 0008 topographs recorded from the samples are characterized by an intensity profile consisting of multiple asymmetric diffraction peaks with an angular separation of only 2” (arcseconds). Using Rocking-curve Analysis by Dynamical Simulation (RADS) program, diffracted intensity profile was used to extract the corresponding strain profile indicating an inhomogeneous strain distribution across the depth of the implanted layer.

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(Invited) Medium-Voltage SiC Devices for Next Generation of Power Conversion

Cited by 6 publications

References 6 publications

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants

High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere

Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography

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(Invited) Medium-Voltage SiC Devices for Next Generation of Power Conversion

Cited by 6 publications

References 6 publications

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (&gt; 1MeV) Implants

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (&gt; 1MeV) Implants

High-temperature resistant interconnection using Ni nanoparticles and Al microparticles paste sintered in an atmosphere

Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography

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Product

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Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants

Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants