(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications

Abstract

First the surface-potential-based compact MOS model, PSP, is introduced. After a discussion of the general advantages of this model, it is benchmarked against measurements from the 45 nm technology node. Finally, we zoom in on the modeling in PSP of two effects that are of special importance for RF applications: distortion and noise.

A Scalable PSP RF Model for 0.11 um MOSFETs

“…With the universality of compact models considered, these parasitic components are not included in the MOSFET compact models, like Berkeley Short-channel IGFET Model (BSIM) [9], EKV [10] and PSP [7,8] The zero bias extraction method [11] is used in the extraction procedure. When the DC point of MOSFET is set as zero, V DS = V GS = 0, the transconductance g m and output conductance g ds are 0.…”

“…The compact model for DC and low frequency circuits mostly focus on the direct measured data, while RF modeling raises higher demands for the model continuity, high order derivatives match and geometry scalability. The surface potential based physical model PSP [7,8] in this work has a superior performance on these aspects. The scalability of RF model is also essential for circuit simulation efficiency.…”