Ion-beam induced epitaxy of silicon

Golecki, I.; Chapman, G.; Lau, S. S.; Tsaur, B. Y.; Mayer, J. W.

doi:10.1016/0375-9601(79)90183-x

Cited by 76 publications

(10 citation statements)

References 7 publications

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“…2, for temperatures below 400 °C the growth is found to be precisely proportional to the energy lost in nuclear collisions. This is consistent with the conclusions of previous studies 10 " 13 but is found in the present case even at very high hole-electron pair-generation rates. There is no hint of the inverse energy trend that inelastic processes would imply.…”

supporting

confidence: 94%

Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon

et al. 1985

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Bombardment with 0.6-3-MeV Ne + ions has been employed to stimulate solid-phase epitaxial growth of amorphous silicon at temperatures 200-500 °C. Two distinctly different regrowth regimes have been identified. In the temperature range 200-400 °C the activation energy for beaminduced regrowth is 0.24 eV, whereas, in the temperature range above 400°C, it is higher (>0.5 eV), but less well defined because of competing thermal effects. Results indicate that ion irradiation generates (athermally) nucleation sites for crystal growth, a process which has a high ( ~ 2.4 eV) activation energy in the absence of ion-beam excitation.PACS numbers: 68.55.+ bAmorphous layers in the near-surface region of crystalline silicon recrystallize by solid-phase epitaxial growth (SPEG) when heated to temperatures of >500°C. 1 This process is characterized by an activation energy of -2.7 eV. 2 Phenomenological models of the SPEG process 3 "" 7 have been successful in providing a qualitative explanation for the dependence of the growth kinetics on both substrate orientation and concentration of dopants; however, details of the growth mechanism are yet to be determined, in particular the interpretation of the activation energy.Recently, it has been observed that SPEG can be induced in silicon at ambient temperatures in the range 200-500 °C by irradiation with energetic ions. 8 " 13 These studies have adequately demonstrated that crystallization is not a consequence of local beam heating but results more directly from ion-atom interactions in the substrate. However, the experimental conditions employed in these studies often precluded the identification of the factors responsible for beam-induced SPEG. In particular, the competition between damage production and crystallization induced by the ion beam often complicated the interpretation of results. 8,10,n In the present study, by simplifying the bombardment conditions we have been able to demonstrate the dominance of defect generation at the amorphouscrystalline interface in controlling SPEG. o We have studied SPEG of -1000-A-thick amorphous silicon layers produced in (100)-oriented single-crystal silicon samples, held at -77 K, by irradiation with 50-keV Si + ions to a fluence of 2.5 x 10 14 cm"" 2 . We have used 0.6-3-MeV Ne + -ion bombardment to stimulate SPEG. These high-energy ions penetrate to depths o of 0.95 to 2.5 jum, respectively. Over the first 4000 A of their penetration the ions lose energy at a nearly constant rate (<5% variation even in the 0.6-MeV case), so that the amorphous layers are uniformly excited throughout their thickness. Before neon-ion bombardment all samples were preannealed thermally at 450 °C for 15 min to remove partial amorphous regions and thus provide an abrupt crystal-amorphous interface for beam-induced SPEG studies. Both Ne + -induced crystallization and subsequent analysis of the extent of growth using 1.5-MeV-He + ion channeling and backscattering were performed in situ in a vacuum chamber operating at 10" 7 Torr. Samples were mounted on a two-axis...

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confidence: 94%

Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon

et al. 1985

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“…The latter is generally ascribed to the point defects produced in displacement cascades generated by the nuclear collisions between the ions of the annealing beam and the target atoms. [22][23][24] According to this interpretation, migration and recombination of these point defects at the interface between amorphous and crystalline zones give rise to damage recovery and thus to epitaxial recrystallization. This mechanism supposes that the recrystallization rate is directly linked to the defect generation rate at the vicinity of the interface.…”

Section: Discussionmentioning

confidence: 99%

Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide

Benyagoub

Audren

2009

Journal of Applied Physics

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Although silicon carbide has attracted extensive investigations of ion irradiation effects at low energy owing to its potential use in harsh environments, very few works were carried out in the field of ion irradiation at high energy. A recent preliminary study exploring the combination of low and high energy ion irradiation effects in silicon carbide revealed that the damaged layer formed by low energy ion irradiation can undergo an epitaxial recrystallization under subsequent swift heavy ion irradiation. The present paper is devoted to the investigation of the mechanisms at the origin of this phenomenon by performing additional experiments. A detailed analysis of the kinetics of this recrystallization effect demonstrates that the latter cannot be explained by the models proposed for the well-known ion-beam-induced epitaxial crystallization process. Furthermore, it is found that this effect can be accounted for by a mechanism combining the melting within the ion tracks of the amorphous zones through a thermal spike process and their subsequent epitaxial recrystallization initiated from the neighboring crystalline regions wherever the size of the latter surpasses a certain critical value.

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“…An alternative method to the thermally induced SPE is the ion-beam-induced epitaxial crystallization (IBIEC) process [31][32][33]. An interesting feature of IBIEC is that it has been found by Heera et al [6,7] to occur in 6H-SiC above a minimum temperature of about 570 K significantly lower than that necessary for SPE.…”

Section: Irradiations With Low Energy Ionsmentioning

confidence: 98%

Irradiation effects induced in silicon carbide by low and high energy ions

Benyagoub

2008

Nuclear Instruments and Methods in Physics Research Section B:

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Ion-beam induced epitaxy of silicon

Cited by 76 publications

References 7 publications

Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon

Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon

Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide

Irradiation effects induced in silicon carbide by low and high energy ions

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