Ion beam sputter deposition of TiO2 films using oxygen ions

Properties of secondary particles for the reactive ion beam sputtering of Ti and TiO2 using oxygen ions

“…In an earlier study, the same setup was used to deposit TiO 2 thin films by simply replacing the ESMS with a semicircular substrate holder. 20 The ion source was developed in-house and uses inductively coupled radio frequency (RF) excitation to form a plasma inside its discharge chamber. 21 The three-grid extraction system has an open diameter of 16 mm.…”

“…The sputtering target was a disk of either polycrystalline Ti or TiO 2 with a diameter of 100 mm, thickness of 3 mm, and purity of 99.99%. During sputtering from both targets, no additional O 2 was lead into the vacuum chamber since it was shown in earlier works 20 that the O 2 flow of 5.0 SCCM from the ion source already provided enough oxygen to ensure the formation of TiO 2 under the same sputtering conditions. The base pressure was 2.0 × 10 −6 mbar, while the working pressure was 4.0 × 10 −5 mbar.…”

“…The angular distribution of the sputtered Ti particles was determined by the collection method, i.e., TiO 2 films were deposited with the same process parameters. 20 The deposition rate and mass density of the films were used to calculate the differential sputtering yield of the sputtered Ti, i.e., the number of sputtered Ti atoms per solid angle and the primary ion impinging on the target, which are given by…”

“…13 Nevertheless, most studies related to the properties of secondary particles during ion beam sputtering are either restricted to a fixed sputtering geometry or only focus on the properties of sputtered particles, e.g., the excellent research studies by Goehlich et al [14][15][16][17][18][19] The aim of this work is to reveal the effect of substituting the noble gas primary ions by reactive oxygen ions on the properties of the secondary particles and to set these results into context with earlier works related to the properties of the TiO 2 films deposited under the same conditions. 20…”

Schichtabscheidung mittels Ionenstrahlzerstäuben

“…Deshalb wurden am Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM) in den vergangenen Jahren umfangreiche, systematische Untersuchungen zum Ionenstrahlzerstäuben an verschiedenen Materialsystemen durchgeführt: Ag (Metall, [7,8]), Ge (Halbleiter, [9,10]), TiO 2 (Dielektrikum, [11,[13][14][15][16]) oder SiO 2 (Dielektrikum, [17,18]…”