Ion beam sputter deposition of Ag films: Influence of process parameters on electrical and optical properties, and average grain sizes

Bundesmann, Carsten; Feder, René; Gerlach, Jürgen W.; Neumann, H.

doi:10.1016/j.tsf.2013.11.097

Cited by 19 publications

(18 citation statements)

References 11 publications

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“…It is expected that the properties of the Ge films are not as sensitive to the geometrical and primary particle properties as the properties of the Ag films studied before [3,6,7], because the properties of the film forming particles are less affected by the geometrical and primary ion parameters.…”

Section: Discussionmentioning

confidence: 99%

“…The correlation of the primary and secondary process parameters and electrical and optical properties of the Ag films have also been shown [3].…”

Section: Introductionmentioning

confidence: 97%

“…In IBD, the energy and mass of the primary ions, the mass of the target atoms and the process geometry lead to different angular and energy distributions of the sputtered and scattered particles and therefore to different thin film properties [1][2][3]. A systematic analysis of the properties of these film forming particles is necessary for further process adaption.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Ion beam sputtering of germanium – Energy and angular distribution of sputtered and scattered particles

Feder

Bundesmann

Neumann

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Discussionmentioning

confidence: 99%

“…The correlation of the primary and secondary process parameters and electrical and optical properties of the Ag films have also been shown [3].…”

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ion beam sputtering of germanium – Energy and angular distribution of sputtered and scattered particles

Feder

Bundesmann

Neumann

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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“…Even though IBSD is widely used, the systematic investigation of the relationship between process parameters, the properties of film forming particles, and the properties of the deposited films has been reported only for the elemental metal Ag [2][3][4]. In the present paper, the systematic investigations are extended from metals to the elemental semiconductor Ge.…”

Section: Introductionmentioning

confidence: 97%

“…Fig. 1 shows a schematic sketch of the IBSD setup inside the deposition chamber [4]. It consists of a broad beam ion source, a target holder and a substrate holder.…”

Section: Introductionmentioning

confidence: 99%

Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

et al. 2015

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Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Bundesmann

Feder

Lautenschläger

et al. 2015

Contrib. Plasma Phys.

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Ion beam sputter deposition allows tailoring the properties of the film-forming, secondary particles (sputtered target particles and backscattered primary particles) and, hence, thin film properties by changing ion beam (ion energy, ion species) and geometrical parameters (ion incidence angle, polar emission angle). In particular, the energy distribution of secondary particles and their influence on the ion beam deposition process of Ag was studied in dependence on process parameters. Energy-selective mass spectrometry was used to measure the energy distribution of sputtered and backscattered ions. The energy distribution of the sputtered particles shows, in accordance with theory, a maximum at low energy and an E −2 decay for energies above the maximum. If the sum of incidence angle and polar emission angle is larger than 90• , additional contributions due to direct sputtering events occur. The energy distribution of the backscattered primary particles can show contributions by scattering at target particles and at implanted primary particles. The occurrence of these contributions depends again strongly on the scattering geometry but also on the primary ion species. The energy of directly sputtered and backscattered particles was calculated using equations based on simple two-particle-interaction whereas the energy distribution was simulated using the well-known Monte Carlo code TRIM.SP. In principal, the calculation and simulation data agree well with the experimental findings.

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Ion beam sputter deposition of Ag films: Influence of process parameters on electrical and optical properties, and average grain sizes

Cited by 19 publications

References 11 publications

Ion beam sputtering of germanium – Energy and angular distribution of sputtered and scattered particles

Ion beam sputtering of germanium – Energy and angular distribution of sputtered and scattered particles

Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

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