Ion implantation induced by Cu ablation at high laser fluence

Torrisi, L.; Mezzasalma, A. M.; Gammino, S.; Badziak, J.; Parys, P.; Wołowski, J.; Láska, L.; Franco, Giovanni

doi:10.1016/j.apsusc.2005.11.071

Cited by 12 publications

(2 citation statements)

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“…It makes it possible to evaluate the ion implanted fluence for a single laser shot or as a function of the laser irradiation time by using high repetitive laser pulses. Multi-species ion implantation and multi-energy ion implants are useful for the modification of the chemical and physical properties of surface layers and for the generation of the high adhesion of thin films with different substrates [5]. A comparison between the ion energy measurements obtained online with Time-Of-Flight (TOF) techniques and Rutherford Backscattering Spectrometry (RBS) measurements of the ion depth distribution in implanted substrate obtained by using 2 MeV He + ions is presented [6].…”

Section: Introductionmentioning

confidence: 99%

High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

Cutroneo

Macková

Malínský

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionmentioning

confidence: 99%

High-intensity laser for Ta and Ag implantation into different substrates for plasma diagnostics

Cutroneo

Macková

Malínský

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…The direct ion implantation of multi species and multi energetic ions which penetrate at different depths, as well as the high-ion current density are useful to modify many chemical and physical properties of surface layers, such as hardness, roughness, wet-ability, chemical inertless, and to generate high adhesion of thin films with different substrates [2]. Recently, the remarkable enhancements exhibited over a wide number of experiments were due to more knowledge on the laser parameters and target composition and geometry.…”

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confidence: 99%

Ion Beam Analysis applied to laser-generated plasmas

et al. 2016

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This paper presents the research activity on Ion Beam Analysis methods performed at Tandetron Laboratory (LT) of the Institute of Nuclear Physics AS CR, Rez, Czech Republic. Recently, many groups are paying attention to implantation by laser generated plasma. This process allows to insert a controllable amount of energetic ions into the surface layers of different materials modifying the physical and chemical properties of the surface material. Different substrates are implanted by accelerated ions from plasma through terawatt iodine laser, at nominal intensity of 1015 W/cm2, at the PALS Research Infrastructure AS CR, in the Czech Republic. This regime of the laser matter interaction generates, multi-MeV proton beams, and multi-charged ions that are tightly confined in time (hundreds ps) and space (source radius of a few microns). These ion beams have a much lower transverse temperature, a much shorter duration and a much higher current than those obtainable from conventional accelerators. The implementation of protons and ions acceleration driven by ultra-short high intensity lasers is exhibited by adopting suitable irradiation conditions as well as tailored targets. An overview of implanted targets and their morphological and structural characterizations is presented and discussed.

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