Ion-induced sustained high current condition in a bipolar device

Koga, R.; Ferro, R.; Mabry, D. J.; Pinkerton, Steven D.; Romeo, D.; Scarpulla, J.; Tsubota, T.K.; Shoga, M.

doi:10.1109/23.340559

Cited by 11 publications

(3 citation statements)

References 15 publications

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“…The incidence of ions causes the controlled silicon to get into the turn-on state, and a current is produced in it. Due to the positive feedback characteristics of the controllable silicon, the current is increased continuously, and the PNPN structure comes into a rebirth current state, which causes an SEL event to occur [2,3] . Figure 1 shows the current transformation curve for a BM3802 device to experience an SEL event in the kernel and the port.…”

Section: Elements and Characteristics Of Selmentioning

confidence: 99%

Experimental study on the single event latchup simulated by a pulse laser

et al. 2009

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This paper introduces major characteristics of the single event latchup (SEL) in CMOS devices. We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser. The laser simulation results give the energy threshold for samples to undergo SEL. SEL current pulses are measured for CMOS devices in the latchup state, the sensitive areas in the devices are acquired, the major traits, causing large scale circuits to undergo SEL, are summarized, and the test equivalence between a pulse laser and ions is also analyzed.

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Section: Elements and Characteristics Of Selmentioning

confidence: 99%

Experimental study on the single event latchup simulated by a pulse laser

et al. 2009

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“…Finally, a new destructive phenomena has been recently reported corresponding to a "latch-up"-like event in bipolar circuits [48], [49]. This "high current anomaly" (HCA) is thought to be due to second breakdown in bipolar devices.…”

Section: E Destructive Phenomenamentioning

confidence: 99%

Recent trends in single-event effect ground testing

Duzellier

Ecoffet

1996

IEEE Trans. Nucl. Sci.

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Single-event phenomena result from a single particle, heavy ion or proton, inducing trainsients in the sensitive volume of integrated circuits. Particle accelerators are used to simulate the space environment in order to perform a full characterization of the components. This paper describes the methods and facilities necessary for single-event effect (SEE) testing as well as recent trends observed in the device response to radiation.

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“…A typical I-V characteristic of SEL with AT22V10B is shown in Figure 18 [14]. When an SEL takes place, the bias current jumps to about 1 A at 5V.…”

Section: B Flash Memory Sensitivities To Seementioning

confidence: 99%