SEE sensitivities of selected advanced flash and first-in-first-out memories

Abstract

Single event effects sensitivity measurements of advanced flash and first-in-first-out memories have been made. While many upsets are transients, other upsets initiated by high LET ions are semi-permanent.

Effect of ion energy on charge loss from Floating Gate memories

“…However, charge loss following the impact of a single ion on a FG is all but negligible. Not just errors in the array were reported recently [17][18][19][20], but the charge loss from a programmed FG following a single high energy ion strike has been modeled in last years [21][22][23][24][25][26]. On the other side, single FGs are so sensible to the impact of a single ion that the large variation in device threshold voltage VTH associated to small changes in the tiny charges stored in the FGs makes them extremely sensitive monitors of radiation effects.…”