2016
DOI: 10.1134/s1063785016070300
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Ion plasma deposition of oxide films with graded-stoichiometry composition: Experiment and simulation

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Cited by 10 publications
(4 citation statements)
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“…Total pressure of the magnetron sputtering system is responsible for evaluating the performance and transport mechanism of sputtering process [48]. This pressure not limited to purity and quality of thin films but also important factor or parameter in transport process of sputtered parameters [49].…”
Section: Optimization Of Total Pressurementioning
confidence: 99%
“…Total pressure of the magnetron sputtering system is responsible for evaluating the performance and transport mechanism of sputtering process [48]. This pressure not limited to purity and quality of thin films but also important factor or parameter in transport process of sputtered parameters [49].…”
Section: Optimization Of Total Pressurementioning
confidence: 99%
“…Nevertheless, in the latter case, it is possible to vary the composition of the films within certain limits by changing the deposition parameters. Thus, it has been shown that by varying the working gas pressure (in the range of 2-60 Pa) during RF magnetron sputtering of a ceramic target of barium-strontium titanate (Ba 1-x Sr x TiO 3 or BST), it is possible to change the composition within a fairly wide range (x = 0.3 -0.65) (Volpyas et al 2016). The physical reason for this is a change in the length of the thermalization zone.…”
Section: Introductionmentioning
confidence: 99%
“…The physical reason for this is a change in the length of the thermalization zone. In this case, with an increase in the working gas pressure, the ratio of atoms deposited under directional and diffuse sputtering regimes changes (Volpyas, Kozyrev 2011;Volpyas et al 2016).…”
Section: Introductionmentioning
confidence: 99%
“…In the present study, we propose a method of ion-plasma deposition onto a substrate that provides an opportunity to fabricate multicomponent films with controlled continuous variation of composition over their thickness using a single target. The method relies on variation of the directional properties of fluxes of sputtered target atoms as a result of their thermalization and transition to a diffusion motion mode, which are induced by changes in the working gas pressure in the process of film growth [10,11].…”
mentioning
confidence: 99%