Ionized Cluster Beam Deposition of Polycrystalline Thin Films of CuInSe₂

Abstract

We studied the interaction between hydrogen and point defects generated by electron irradiation of Si by means of optical absorption measurement. Specimens were prepared from n-type Si crystals. Those specimens were doped with hydrogen by annealing in a hydrogen atmosphere at 1200 • C followed by quenching and were subsequently irradiated with 3 MV electrons at room temperature. We observed their optical absorption spectra at about 6 K with a resolution of 0.25 cm −1 . Many optical absorption peaks were observed in electron-irradiated specimens. Most of those peaks disappeared at around 300 • C due to isochronal annealing. On the other hand, new optical absorption lines appeared at 2223 cm −1 and 2166 cm −1 after annealing at high temperature, namely above 150 • C. The former is known to be due to a complex of one self-interstitial atom and 4 hydrogen atoms. We propose that the 2166 cm −1 peak is due to a complex of one self-interstitial atom and three hydrogen atoms. These results clearly show that complexes of self-interstitials exist after electron-irradiation of Si and they dissociate above 150 • C.

Synthesis and Characterization of Ternary CuInS2 Nanorods via a Hydrothermal Route

“…In addition, CuInS is a candidate for the cathode material of photochemical devices owing to its high performance and high output stability (6). CuInS can be synthesized by a variety of methods such as solid-state reaction at elevated temperature (7), electrodeposition (8), spray pyrolysis (9), sputtering (10), multi-and single source chemical vapor deposition (CVD) (11), and ionized cluster beam technique (12). However, these methods require either very high temperature (typically 600}9003C), high pressure, or special apparatus.…”

Cu(In,Ga)Se2 thin-film solar cells grown with cracked selenium

“…The XRD patterns of the samples showed the typical chalcopyrite pattern, and clear peaks from (11 2), (2 0 4)/ (2 2 0), (3 1 2)/(11 6) planes were observed. The films were preferentially oriented toward (11 2) plane, and the peaks attributed to hetero-phase such as Cu x Se were not observed except the spectrum for 550 1C which has small Cu x Se-phase near the (11 2) peak [9]. The orientation of each spectrum was almost identical to the film grown by the three-stage process grown with normal Se at the same growth temperature.…”

Growth of High-Quality CuGaSe2 Thin Films using Ionized Ga Precursors

“…The pioneer works to enhance activity of source atoms during evaporation were carried out by using an ionized cluster beam (ICB) deposition technique [7,8], and CuInSe2 films were grown at a low substrate temperature of 300 o C. In this paper, we have grown CuGaSe2 (CGS) films by a co-evaporation system with ionized Ga precursors. Structural properties of CGS films were evaluated by X-ray diffraction (XRD), scanning electron microscope (SEM) and Raman spectroscopy.…”