Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results

Low-frequency noise in individual carbon nanotube field-effect transistors with top, side and back gate configurations: effect of gamma irradiation

“…Gamma irradiation is widely used to modify various characteristics of different materials. For example, an improvement of DC and RF electrical performance after a cumulative gamma radiation dose of 4.28 × 10 2 Gy and high radiation hardness up to a radiation dose of 8.5 × 10 3 Gy has been shown for GaAs-based FETs [18,19]. The improvement of the transistor functionality using gamma irradiation treatment is mainly due to the formation of more homogeneous contacts, a decrease in structural defects and stress relaxation effects.…”

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

“…Accordingly, there have been many studies on HEMTs based on various III-V materials, such as GaAs, GaN, and InP under various radiation environments. [8][9][10][11][12][13][14][15] In terms of gamma-ray (γ-ray) radiation effects on an HEMT device, Guhel et al show the improvement of the DC and power performance of an AlGaAs/ InGaAs Pseudomorphic High Electron Mobility Transistor with a γ radiation dose of 42.8 krads because of a reduction of the access resistances. 8) In a GaN-based HEMT structure, Lee et al exhibit that the minority carrier diffusion length is increased for low doses of γ-rays below ∼250 Gy and the performance of HEMTs shows a deterioration for high doses of γ-ray radiation above ∼300 Gy.…”