IR bolometers made of polycrystalline silicon germanium

Sedky, Sherif; Fiorini, Paolo; Caymax, Matty; Verbist, Agnes; Baert, Chris

doi:10.1016/s0924-4247(98)00007-7

Cited by 94 publications

(48 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Germanium is a typical semiconductor carrying a specific resistance of 500 cm at room temperature. Germanium-based materials are in use for light emitting devices [1], infrared sensors [2], and solar cells [3]. Due to the possibility of obtaining different values for the conductivity, germanium has a broad area of usage of the semiconductors such as current resistors, photovoltaic cells, and other electronic devices and appliances.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Germanium Thin Films Prepared by the Vacuum Evaporation Technique

Al-Sharafi

Mohyeddine

Mohammed

et al. 2014

Physics Research International

View full text Add to dashboard Cite

Germanium (Ge) thin films have been deposited onto the glass substrates by the vacuum evaporation technique. The effect of annealing temperature on the structural and optical properties of the germanium thin films was investigated. The structural and optical properties of thin films were characterized by XRD, SEM, and UV-Vis techniques. XRD results showed that the structure of the deposited thin films changed from amorphous phase for the films, which deposited at room temperature, to crystalline phase for the films, which deposited at high temperature. Optimum temperature to obtain a good crystalline structure was 525 ∘ C. The SEM image also showed that the crystallization of the thin films is increased with increasing of annealing temperature. Transmittance and reflectance spectral were used to calculate the absorption coefficient. Two absorption edges in two spectral regions were distinguished according to direct and indirect electron transitions. Energy band gap was calculated by using the Tauc relationship for both direct and indirect electron transitions. The average value of was equal to 0.79 eV and 0.61 eV for direct and indirect transitions, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Germanium Thin Films Prepared by the Vacuum Evaporation Technique

Al-Sharafi

Mohyeddine

Mohammed

et al. 2014

Physics Research International

View full text Add to dashboard Cite

show abstract

“…Precisely controllable TEC (thermo-electric cooler) including probe station and semiconductor parameter analyzer was used for the measurements of resistance change in accordance to the temperature variation of nickel oxide film. We calculated average value at the temperature range from of Conduction in polycrystalline materials is a thermally activated process [12] and hence, the resistivity R(T) can be indicated as equation (1), where Ea is the activation energy [13]. Young-Chul Jung Gyohun Koo Jae-Sung Lee Sung-Ho Hahm Yong Soo Lee Calculated TCR value by equation (1) and (2) is drawn in Fig.…”

Section: Resultsmentioning

confidence: 99%

NiO Films Formed at Room Temperature for Microbolometer

Jung¹,

Koo²,

Lee³

et al. 2013

Journal of Sensor Science and Technology

View full text Add to dashboard Cite

Nickel oxide films using RF sputter was formed on the SiO 2 /Si substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about 34.25 Ω cm. And it was reduced to 18.65 Ω cm according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of 34.25 Ω cm was -2.01 %/ o C. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images. Received : Aug. 1, 2013, Revised : Sep. 24, Accepted : Sep. 25, 2013 This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Keywords

show abstract

“…The first poly-SiGe MEMS device fabricated at imec was an infrared bolometer [45]. Since then, several poly-SiGe MEMS devices have been presented.…”

Section: Sige Mems Demonstratorsmentioning

confidence: 99%