IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Sgourou, E. N.; Angeletos, T.; Chroneos, Alexander; Londos, C. A.

doi:10.1007/s10854-017-6798-5

Cited by 2 publications

(1 citation statement)

References 120 publications

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“…One of the first studies in this direction was reported by Brelot in 1972, [1] but there is still interest in this topic. [2][3][4][5][6] The main reason is that the isovalent tin impurity in silicon is one of the most efficient radiation-induced vacancy (V) traps. Therefore, it is suggested that Si:Sn can have a radiation hardening potential.…”

Section: Introductionmentioning

confidence: 99%

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kras'ko

Kolosiuk

Voitovych

et al. 2021

Physica Status Solidi (a)

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Herein, the results that determine some conditions for increasing the radiation hardness of 60Co gamma or 1 MeV electron‐irradiated tin‐doped n‐type Czochralski silicon (Cz n‐Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low‐resistivity Cz n‐Si with P doping levels >5 × 1014 cm−3 containing in addition [Sn] ≈1017–1019 cm−3 has a radiation hardening potential. In this material, the radiation degradation of carrier lifetime is several times smaller compared with Sn‐free n‐Si, whereas the conductivity compensation is negligible for both materials. The reduction of the lifetime degradation rate is due to a reduction of VO concentration in low‐resistivity Cz n‐Si:Sn.

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Section: Introductionmentioning

confidence: 99%

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kras'ko

Kolosiuk

Voitovych

et al. 2021

Physica Status Solidi (a)

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The Structure and Properties of Sn/SiSn-nanodisperse Alloy Thin Films

Jiang

Ming

et al. 2019

IOP Conf. Ser.: Mater. Sci. Eng.

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Near-infrared brain imaging technology has great advantages in brain imaging and inspection of brain disorders compared to traditional brain imaging technology. Silicon-tin (SiSn) alloys are expected to be the material for infrared brain imaging detectors. The structure and properties of the SiSn alloy thin films with relatively low Sn concentration, which are the key for it to be used in near-infrared brain imaging technology, have not been reported yet. Here, we report the deposition time, growth temperature, microstructure, resistivity, and transmittance of amorphous silicon-tin (a-Si1-xSnx) alloy thin films prepared by radio frequency (RF) magnetron sputtering. Reasonable deposition time and growth temperature for the preparation of the films are given in this paper. Sn nanocrystals are observed in the a-Si1-xSnx alloy thin films. The variations in resistivity and transmittance indicate that it has excellent electrical and optical properties so that it can be used as a near-infrared brain imaging detector material.

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IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Cited by 2 publications

References 120 publications

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

The Structure and Properties of Sn/SiSn-nanodisperse Alloy Thin Films

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IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Cited by 2 publications

References 120 publications

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

The Structure and Properties of Sn/SiSn-nanodisperse Alloy Thin Films

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Product

Resources

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Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness