Irradiation Enhancement of Electrical Properties of Passive Impurities in Silicon Crystals

Yeritsyan, Hrant N.; Sahakyan, Aram A.; Harutyunyan, V. V.; Grigoryan, N. E.; Sahakyan, Vahan A.

doi:10.9734/psij/2014/11458

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…To support this statement, another sample of n-type silicon crystal with resistivity of 700 Ω cm was studied where the carrier concentration is much less and hence does not hinder the observation of scattering process. It was observed that the difference between carrier concentrations before and after irradiation is an order of magnitudes, and the carrier mobility decreased twice even at room temperature, which describes the behavior of clusters radiation defect formation [27]. inorganic scintillators for high energy physics detectors involves the study of radiation hardness crystals.…”

Section: Silicon and Silicon-dielectric Structuresmentioning

confidence: 99%

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AREAL low energy electron beam applications in life and materials sciences

Tsakanov

Aroutiounian

Amatuni

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Section: Silicon and Silicon-dielectric Structuresmentioning

confidence: 99%

“…The nature of observed physical phenomena strongly depends on structural defects of materials (displaced atoms in crystal lattice, impurity centers, etc.) [23][24][25][26][27].…”

Section: Silicon and Silicon-dielectric Structuresmentioning

confidence: 99%

AREAL low energy electron beam applications in life and materials sciences

Tsakanov

Aroutiounian

Amatuni

et al. 2016

Nuclear Instruments and Methods in Physics Research Section A:

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Quasi-Chemical Reactions in Irradiated Silicon Crystals with Regard to Ultrafast Irradiation

Yeritsyan¹,

Sahakyan²,

Grigoryan³

et al. 2018

JMP

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This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different energies: 3.5, 14, 25 and 50 MeV and pico-second pulse duration with energy 3.5 MeV. V-V, I-impurity atom and V-impurity atom interactions are analyzed both experimentally and as modeled using computer simulations. A process of divacancy (V 2) accumulation in the dose-dependent linear region is investigated. The effect of impurities on recombination of correlated divacancies, and I-atoms that had become displaced from regular lattice points is estimated by computer modeling of an appropriate diffusion-controlled process. It is concluded that the experimental results can be interpreted quantitatively in terms of a strongly anisotropic quasi-one-dimensional diffusion of displaced I-atoms. In addition, a significant difference is found between the effects of pico-second duration electron beam irradiation, which causes the formation of A-centre (V + Oxygen) clusters, while when the beam is applied on a micro-second timescale, divacancies are created instead, although the electrons have the same energy in both cases.

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Irradiation Enhancement of Electrical Properties of Passive Impurities in Silicon Crystals

Cited by 2 publications

References 5 publications

AREAL low energy electron beam applications in life and materials sciences

AREAL low energy electron beam applications in life and materials sciences

Quasi-Chemical Reactions in Irradiated Silicon Crystals with Regard to Ultrafast Irradiation

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