Irradiation of Transition Metal Dichalcogenides Using a Focused Ion Beam: Controlled Single‐Atom Defect Creation

Abstract

Manipulation and structural modifications of two-dimensional (2D) materials for nanoelectronic and nanofluidic applications remain obstacles to their industrial-scale implementation. Here, we demonstrate how a 30 kV focused ion beam (FIB) can be utilized to Received: ((will be filled in by the editorial staff)) Revised: ((will be filled in by the editorial staff))

Wafer‐Scale Fabrication of Nanopore Devices for Single‐Molecule DNA Biosensing using MoS2

“…Another challenge is the lack of an efficient nanopore fabrication method that could be employed for wafer‐scale fabrication while maintaining pore size reproducibility and distribution. Among all the state‐of‐art techniques, ion beam irradiation [ 22 ] and lithography‐based fabrication [ 59,60 ] are the most promising. However, they are still facing a number of technical problems which make them not suitable for batch fabrication of single nanopore devices.…”

“…monolayer MoS 2 nanopore devices have achieved single-nucleotide differentiation. [12] Furthermore, monolayer MoS 2 nanopore devices are becoming promising tools for emerging scientific applications in defect-engineering research [19][20][21][22][23] and highly efficient blue energy harvesting. [24][25][26] One of the most crucial bottlenecks of monolayer device fabrication is the thin film synthesis and its processing scale.…”

“…Experimentally, using a gradient of room temperature ionic liquids and KCl solution, monolayer MoS 2 nanopore devices have achieved single‐nucleotide differentiation. [ 12 ] Furthermore, monolayer MoS 2 nanopore devices are becoming promising tools for emerging scientific applications in defect‐engineering research [ 19–23 ] and highly efficient blue energy harvesting. [ 24–26 ]…”

Defect Engineering in Metastable Phases of Transition‐Metal Dichalcogenides for Electrochemical Applications

“…impact of focused Ga + ion beam bombardment on the structural and physical properties of monolayer TMDs. [63] During ion irradiation, single atom vacancies are generated in monolayer TMDs, allowing for spatial selectivity. Figure 4f-h shows aberration-corrected STEM images of WS 2 after exposure to ion irradiation.…”

“… a) ADF‐STEM image of MoS 2 , [54a] Copyright 2013, Nature Publishing Group, b) HR‐TEM image of polycrystalline MoS 2 film, c) STEM image showing vacancies in MoS 2 film, [56] Copyright 2016, American Chemical Society, d) TEM images of the oxygen incorporated MoS 2 ultrathin NSs synthesized at 140 and 200 °C, [59] Copyright 2013, American Chemical Society, e) HR‐STEM image of a 2H−WS 2 monolayer, [61] Copyright 2014, American Chemical Society, high‐magnification aberration‐corrected STEM images of monolayer WS 2 exposed to irradiation with doses of f) 0 ions cm −2 , g) 5.1×10 13 ions cm −2 , and h) 1.9×10 15 ions cm −2 , [63] Copyright 2019, Wiley‐VCH, i) HR‐TEM image of the untreated single‐layer WS 2 , j) HR‐TEM image of the same single‐layer WS 2 after 10 s of plasma bombardment, [64] Copyright 2015, American Chemical Society, k–l) TEM images of MoS 2 electrode before and after the cycle, [69] Copyright 2019, Wiley‐VCH, m) TEM and n) HR‐TEM images of defected MoS 2 , [70] Copyright 2019, American Chemical Society.…”