Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

Thomas, D. G.; Hopfield, J. J.; Frosch, C. J.

doi:10.1103/physrevlett.15.857

Cited by 321 publications

(101 citation statements)

References 2 publications

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“…Fig.5 shows PL spectra for a set of GaPxN, samples with x varying 0.004 % to 0.6 % [16]. The spectrum of the most dilute sample shows the emission lines of nearly all the nitrogen induced bound states in GaPN [5]. However, on increasing nitrogen concentration, those sharp lines due to nitrogen pairs at the higher energy side broaden and quench sequentially in the order of increasing binding energy.…”

Section: New "Band Edge" Of Gapnmentioning

confidence: 99%

“…Nitrogen is one of a very distinct group of isoelectronic impurities in I1I-V semiconductors. Long before the finding of the large band gap reduction it was known that the impurity states associated with an isolated nitrogen and various nitrogen pairs have progressively lower energy levels in GaP [5] and GaAs [6,7]. This trend had actually already hinted at the type II band alignment between GaP or GaAs and GaN.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

et al. 2001

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Isoelectronic impurity nitrogen atoms have been found to generate a series of localized states in GaP and GaAs. These states can be either bound (within the band gap) or resonant (above the band gap) when in the dilute doping limit (roughly < 1019 cm−3 for GaP and < 1018 cm−3 for GaAs). With increasing nitrogen doping level, a shift of the absorption edge from the binary band gap has been observed for the so-called GaPN or GaAsN alloy. We discuss the similarity and dissimilarity between the two systems in the following aspects: (1) How does the nitrogen doping perturb the host band structure? (2) How do the nitrogen bound states evolve with increasing nitrogen doping level? (3) What are the dominant contributors to the band edge absorption? And (4) does a universal model exist for GaPN and GaAsN? Other issues that will be discussed are: how does one define the band gap for these materials, and what is the relevance of various theoretical band structure calculations to the experimentally measured parameters.

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Section: New "Band Edge" Of Gapnmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

et al. 2001

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“…In general, different host/impurity combinations may be divided into two categories: those that create localized gap states, and those that create only resonant states. For example, a DLS located within the gap and below the conduction band minimum (CBM, "α-type behavior") is created for most 3d impurities in III-V semiconductors [1], nitrogen [2,3,4] and oxygen [3,5] in GaP, oxygen in ZnTe [6,7], hydrogen in MgO [8], or oxygen vacancies in Al 2 O 3 [9]. On the other hand, the DLS is located above the CBM ("β-type behavior") for nitrogen in GaAs [3,4,10], oxygen in ZnS or ZnSe [11], hydrogen in ZnO [12], oxygen vacancies in In 2 O 3 [9], as well as all classic, hydrogenic donors in semiconductors [13].…”

Section: Introductionmentioning

confidence: 99%

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

2005

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Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI 2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict persistent electron photoconductivity (n-type PPC) caused by the oxygen vacancy V O in n-ZnO, and persistent hole photoconductivity (p-type PPC) caused by the Se vacancy V Se in p-CuInSe 2 and p-CuGaSe 2 . We find that V Se in the chalcopyrite materials is amphoteric having two "negative-U" like transitions, i.e. a double-donor transition ε(2+/0) close to the valence band and a double-acceptor transition ε(0/2−) closer to the conduction band. We introduce a classification scheme that distinguishes two types of defects (e.g., donors): type-α, which have a defect-localized-state (DLS) in the gap, and type-β, which have a resonant DLS within the host bands (e.g., conduction band). In the latter case, the introduced carriers (e.g., electrons) relax to the band edge where they can occupy a perturbedhost-state (PHS). Type α is non-conducting, whereas type β is conducting. We identify the neutral anion vacancy as type-α and the doubly positively charged vacancy as type-β. We suggest that illumination changes the charge state of the anion vacancy and leads to a crossover between α-and β-type behavior, resulting in metastability and PPC. In CuInSe 2 , the metastable behavior of V Se is carried over to the (V Se -V Cu ) complex, which we identify as the physical origin of PPC observed experimentally. We explain previous puzzling experimental results in ZnO and CuInSe 2 in the light of this model.

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“…It is known that the isoelectronic traps can improve the efficiency of radiative recombination of electrons and holes, as was shown for the light--emitting diodes based on GaP:N [4]. In the paper [5], the authors report the observation of an exciton bound with isoelectronic nitrogen atom in GaP. According to Hopfield et al, the difference of electronegativity between nitrogen and phosphor was suggested to be responsible for the binding of the exciton to the nitrogen center [6].…”

Section: Introductionmentioning

confidence: 95%

Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding

et al. 2011

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ZnO films doped with the cadmium (0.4-0.6%) were grown on crystalline sapphire c-Al 2 O 3 substrates applying radiofrequency magnetron sputtering at the temperature of 400• C in Ar-O 2 atmosphere. The as-grown films were investigated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, and cathodoluminescence spectra. The X-ray diffraction analysis revealed that the films possess a hexagonal wurtzite-type structure with the dominant crystallite orientation along the c axis. It was found that the small concentration of the cadmium significantly enhances the ultraviolet emission associated with excitonic transitions. We suggest that this enhancement effect mainly results from appearance of the cadmium isoelectronic traps, which may bind an exciton, thereby increasing the probability of radiation recombination. The effect of Cd isoelectronic impurity on structural and luminescent properties of ZnO films is discussed.

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Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

Cited by 321 publications

References 2 publications

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

Enhancement of the Ultraviolet Luminescence Intensity from Cd-Doped ZnO Films Caused by Exciton Binding

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