Isotope-Purification-Induced Reduction of Spin-Relaxation and Spin-Coherence Times in Semiconductors

Bulancea-Lindvall, Oscar; Eiles, Matthew T.; Són, Nguyên Tiên; Abrikosov, Igor A.; Ivády, Viktor

doi:10.1103/physrevapplied.19.064046

Phys. Rev. Applied

2023

DOI: 10.1103/physrevapplied.19.064046

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Isotope-Purification-Induced Reduction of Spin-Relaxation and Spin-Coherence Times in Semiconductors

Oscar Bulancea-Lindvall

Matthew T. Eiles

Nguyên Tiên Són

et al.

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First-principles computational methods for quantum defects in two-dimensional materials: A perspective

Seo,

Ivády,

Ping

2024

Applied Physics Letters

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Quantum defects are atomic defects in materials that provide resources to construct quantum information devices such as single-photon emitters and spin qubits. Recently, two-dimensional (2D) materials gained prominence as a host of quantum defects with many attractive features derived from their atomically thin and layered material formfactor. In this Perspective, we discuss first-principles computational methods and challenges to predict the spin and electronic properties of quantum defects in 2D materials. We focus on the open quantum system nature of the defects and their interaction with external parameters such as electric field, magnetic field, and lattice strain. We also discuss how such prediction and understanding can be used to guide experimental studies, ranging from defect identification to tuning of their spin and optical properties. This Perspective provides significant insights into the interplay between the defect, the host material, and the environment, which will be essential in the pursuit of ideal two-dimensional quantum defect platforms.

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First-principles computational methods for quantum defects in two-dimensional materials: A perspective

Seo,

Ivády,

Ping

2024

Applied Physics Letters

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Single-Shot Readout of a Nuclear Spin in Silicon Carbide

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Recent advances in the ab initio theory of solid-state defect qubits

Gali

2023

Nanophotonics

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Solid-state defects acting as single photon sources and quantum bits are leading contenders in quantum technologies. Despite great efforts, not all the properties and behaviours of the presently known solid-state defect quantum bits are understood. Furthermore, various quantum technologies require novel solutions, thus new solid-state defect quantum bits should be explored to this end. These issues call to develop ab initio methods which accurately yield the key parameters of solid-state defect quantum bits and vastly accelerate the identification of novel ones for a target quantum technology application. In this review, we describe recent developments in the field including the calculation of excited states with quantum mechanical forces, treatment of spatially extended wavefunctions in supercell models, methods for temperature-dependent Herzberg–Teller fluorescence spectrum and photo-ionisation thresholds, accurate calculation of magneto-optical parameters of defects consisting of heavy atoms, as well as spin-phonon interaction responsible for temperature dependence of the longitudonal spin relaxation T 1 time and magneto-optical parameters, and finally the calculation of spin dephasing and spin-echo times. We highlight breakthroughs including the description of effective-mass like excited states of deep defects and understanding the leading microscopic effect in the spin-relaxation of isolated nitrogen-vacancy centre in diamond.

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Isotope-Purification-Induced Reduction of Spin-Relaxation and Spin-Coherence Times in Semiconductors

Cited by 3 publications

References 57 publications

First-principles computational methods for quantum defects in two-dimensional materials: A perspective

First-principles computational methods for quantum defects in two-dimensional materials: A perspective

Single-Shot Readout of a Nuclear Spin in Silicon Carbide

Recent advances in the ab initio theory of solid-state defect qubits

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