Isotropic 3D silicon hall sensor

Sander, C.; Leube, Carsten; Aftab, Taimur; Ruther, Patrick; Oliver, Paul

doi:10.1109/memsys.2015.7051103

Cited by 14 publications

(6 citation statements)

References 8 publications

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“…The most advanced vector instruments, which simultaneously measure magnitude and direction, are those using the Hall Effect, with their basic principle involving a well-defined and well-understood physical phenomenon [5,6]. However, such instruments have important drawbacks, such as their complicated fabrication process, low spatial resolution, miniaturization problems (for device dimensions on the order of micrometers), the need for temperature compensation circuits and operational amplifiers, high-cost assembly, the numerous electrical connections between individual elements and subsystems, reduced accuracy, and large initial offset [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Optimized anisotropic magnetoelectric response of Fe_61.6Co_16.4Si_10.8B_11.2/PVDF/Fe_61.6Co_16.4Si_10.8B_11.2laminates for AC/DC magnetic field sensing

Reis

Silva

Castro

et al. 2016

Smart Mater. Struct.

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The anisotropic magnetoelectric (ME) effect on a Fe 61.6 Co 16.4 Si 10.8 B 11.2 /PVDF Fe 61.6 Co 16.4 Si 10.8 B 11.2 laminate composite has been used for the development of a magnetic field sensor able to detect both the magnitude and direction of AC and DC magnetic fields. The accuracy (99% for both AC and DC sensors), linearity (92% for the DC sensor and 99% for the AC sensor) and reproducibility (99% for both sensors) indicate the suitability of the sensor for applications. Furthermore, the sensitivity of the Fe 61.6 Co 16.4 Si 10.8 B 11.2 /PVDF/ Fe 61.6 Co 16.4 Si 10.8 B 11.2 anisotropic magnetic sensor-15 and 1400 mV Oe −1 for the DC and AC fields, respectively-are the highest reported in the literature for polymer-based ME materials. Such features, combined with its flexibility, versatility, light weight, low cost and lowtemperature fabrication, lead to the suitability of the developed sensor for use in magnetic sensor applications.

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Section: Introductionmentioning

confidence: 99%

Optimized anisotropic magnetoelectric response of Fe_61.6Co_16.4Si_10.8B_11.2/PVDF/Fe_61.6Co_16.4Si_10.8B_11.2laminates for AC/DC magnetic field sensing

Reis

Silva

Castro

et al. 2016

Smart Mater. Struct.

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“…The sensitivities in the horizontal and vertical directions cannot be optimized simultaneously due to the opposite demands on the active region [ 13 ]. Though a balanced performance is achieved [ 14 , 15 , 16 ], there is a compromise in one of sensitivities in the horizontal and vertical directions. In our work, the sensitivities of x , y , and z can reach 91.70 V/AT, 92.36 V/AT, and 87.10V/AT by adjusting the depth of the active region and P-type layers, albeit in COMSOL.…”

Section: Improvement Of the Cross-shaped 3d Hall Devicementioning

confidence: 99%

“…To solve these problems, horizontal and vertical Hall devices were integrated into the same chip [ 7 , 8 , 9 , 10 , 11 , 12 ]. Besides this, in virtue of different biases, a single device can be also used for the measurement [ 13 , 14 , 15 , 16 ]. Current-related sensitivity ( S I ), a main performance parameter of Hall sensors, is related to the doping concentration of the active region and the thickness parallel to the magnetic field.…”

Section: Introductionmentioning

confidence: 99%

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Tang

Lyu

Wang

et al. 2018

Sensors

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In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall device is designed based on the five-contact vertical Hall device. Some of the device parameters are based on 0.18 μm BCDliteTM technology provided by GLOBALFOUNDRIES. Two-dimensional (2D) and 3D finite element models implemented in COMSOL are applied to understand the device behavior under a constant magnetic field. Besides this, the influence of the sensing contacts, active region’s depth, and P-type layers are taken into account by analyzing the distribution of the voltage along the top edge and the current density inside the devices. Due to the short-circuiting effect, the sensing contacts lead to degradation in sensitivities. The P-type layers and a deeper active region in turn are responsible for the improvement of sensitivities. To distinguish the P-type layer from the active region which plays the dominant role in reducing the short-circuiting effect, the current-related sensitivity of the top edge (Stop) is defined. It is found that the short-circuiting effect fades as the depth of the active region grows. Despite the P-type layers, the behavior changes a little. When the depth of the active region is 7 μm and the thickness of the P-type layers is 3 μm, the sensitivities in the x, y, and z directions can reach 91.70 V/AT, 92.36 V/AT, and 87.10 V/AT, respectively.

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“…2-D Hall sensors serve to determine angular information by measuring the inplane components of B [34], [36], while 3-D Hall sensors give access to all three components. Such 3-D Hall sensors have for example combined vertical and horizontal Hall plates [37], [38] and were realized as isotropic monolithic devices [39], [40].…”

Section: Introductionmentioning

confidence: 99%

Bayesian Sensor Calibration of a CMOS-Integrated Hall Sensor Against Thermomechanical Cross-Sensitivities

Berger

Schott²,

Oliver

2023

IEEE Sensors J.

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For the first time, Bayesian sensor calibration is used to identify efficient calibration procedures for a sensor cross-sensitive to 2 parasitic influences. The object under study is a thermomechanically cross-sensitive sensor system for determining the magnetic induction B. The packaged system comprises a Hall sensor, a stress sensor, and a temperature sensor. The three sensor signals are combined in a polynomial sensor response model with 11 parameters to determine B compensated for offset and cross-sensitivities. For the calibration, sensors are exposed to mechanical stress values between 0 and −68 MPa, temperatures between −40 and 100 °C, and B values between and 25 mT. A sample of 35 sensors serves to extract the prior model parameter distribution of their fabrication run. Bayesian experimental design is applied to identify sets of 2 to 8 optimal calibration conditions under Ioptimality and G-optimality. Bayesian inference then allows to obtain the posterior model parameter distribution of any uncalibrated sensor from the same run. Any such sensor is thereby turned into a B measuring device with individually quantified accuracy. The method was successfully applied to 15 validation sensors. In the case of I-optimality, the median root-mean-square (rms) σ values of the ±1σ confidence intervals for the extracted B values were found to be 113 to 71 µT after near-I-optimal calibrations based on 2 to 8 measurements, respectively. Over the entire range of temperature and mechanical stress and for applied |B| ≤25 mT, corresponding experimentally determined medians of the rms deviations between predicted and applied B values were found to be 89 to 71 µT. Analogous observations apply to G-optimality. In short, Bayesian calibration made it possible to obtain functional B sensors of known accuracy with significantly fewer calibration measurements than model parameters. This was enabled by prior knowledge collected by the thorough characterization of 35 prior-generating specimens.

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Isotropic 3D silicon hall sensor

Cited by 14 publications

References 8 publications

Optimized anisotropic magnetoelectric response of Fe_61.6Co_16.4Si_10.8B_11.2/PVDF/Fe_61.6Co_16.4Si_10.8B_11.2laminates for AC/DC magnetic field sensing

Optimized anisotropic magnetoelectric response of Fe_61.6Co_16.4Si_10.8B_11.2/PVDF/Fe_61.6Co_16.4Si_10.8B_11.2laminates for AC/DC magnetic field sensing

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Bayesian Sensor Calibration of a CMOS-Integrated Hall Sensor Against Thermomechanical Cross-Sensitivities

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Isotropic 3D silicon hall sensor

Cited by 14 publications

References 8 publications

Optimized anisotropic magnetoelectric response of Fe61.6Co16.4Si10.8B11.2/PVDF/Fe61.6Co16.4Si10.8B11.2laminates for AC/DC magnetic field sensing

Optimized anisotropic magnetoelectric response of Fe61.6Co16.4Si10.8B11.2/PVDF/Fe61.6Co16.4Si10.8B11.2laminates for AC/DC magnetic field sensing

A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Bayesian Sensor Calibration of a CMOS-Integrated Hall Sensor Against Thermomechanical Cross-Sensitivities

Contact Info

Product

Resources

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Optimized anisotropic magnetoelectric response of Fe_61.6Co_16.4Si_10.8B_11.2/PVDF/Fe_61.6Co_16.4Si_10.8B_11.2laminates for AC/DC magnetic field sensing

Optimized anisotropic magnetoelectric response of Fe_61.6Co_16.4Si_10.8B_11.2/PVDF/Fe_61.6Co_16.4Si_10.8B_11.2laminates for AC/DC magnetic field sensing