Itinerant Helimagnetic Single-Crystalline MnSi Nanowires

Seo, Kwanyong; Yoon, Ho Kyoung; Ryu, Seong-Wan; Lee, Sunghun; Jo, Younghun; Jung, Myung‐Hwa; Kim, Jinhee; Choi, Yang‐Kyu; Kim, Bongsoo

doi:10.1021/nn901653q

Cited by 39 publications

(47 citation statements)

References 47 publications

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“…Nanostructures of transition metal silicides are being considered for spintronics applications for the same reasons expressed above for thin film geometries; they offer flexibility since both semiconducting and metallic magnetic ground states can be accessed without the complications of nonequilibrium growth conditions and related tendencies for second-phase nucleation and dopant clustering. A large number of transition metal monosilicide nanowires have been successfully grown including FeSi [160,161], CoSi [162,163], Fe 1Àx Co x Si [164,165], MnSi [166,167], NiSi, PtSi [168], and TiSi [168]. This list of materials is supplemented by a number of other transition metal silicide phases that have been synthesized in nanowire form including Ni 2 Si [169] [172,173]; TaSi 2 [168]; and Ti 5 Si 3 [168].…”

Section: Monosilicides and Monogermanides Nanostructure Devicesmentioning

confidence: 99%

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Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed. List of Abbreviations

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Section: Monosilicides and Monogermanides Nanostructure Devicesmentioning

confidence: 99%

“…MnSi nanowires can also be grown using similar synthesis techniques; using MnCl 2 on Si substrate (SiO x ) produces nanowires 50-400 nm in diameter and as long as 100 mm [166,167]. The resistivity of these wires can be small (~50 mOcm in Ref.…”

Section: Monosilicides and Monogermanides Nanostructure Devicesmentioning

confidence: 99%

Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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“…[37][38][39] To fabricate a variety of single-crystalline metal silicide NWs, we employed CVT method where anhydrous metal halide beads and Si substrate or Si powder act as a metal source and a Si source, respectively. By using the CVT approach, we can synthesized not only many metal silicide NWs including MnSi, CrSi 2 , Fe 1-x Co x Si NWs, [40][41][42] but composition modulated cobalt silicides (CoSi, Co 2 Si, and Co 3 Si) 43 and iron silicides (FeSi and Fe 5 Si 3 ) NWs. 44 NT form of metal silicide (V 5 Si 3 NTs) was also synthesized.…”

Section: Metal Silicide 1d Nanostructuresmentioning

confidence: 99%

“…51 To elucidate interesting physical phenomena of MnSi, which have not been clearly understood so far, making single-crystalline MnSi NWs is important because length scales of helimagnetic and skyrmion ordering of MnSi are intrinsically nanoscale. 40,52 Also, the MnSi NWs would provide opportunities for applications such as nanoscale magnetic refrigeration devices and nanospintronics. Free-standing MnSi NWs were grown on a Si substrate in the two-zone horizontal hot-wall furnace.…”

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confidence: 99%

“…Free-standing MnSi NWs were grown on a Si substrate in the two-zone horizontal hot-wall furnace. 40 Si substrates played a dual role as a Si source and a substrate, and anhydrous MnCl 2 beads in an alumina boat were employed as a Mn source. SEM (Figure 22(a)) and TEM images (Figure 22(b)) show that NWs have a clean and smooth A single MnSi NW device as shown in Figure 23(a) was fabricated to investigate its electrical and MR properties.…”

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Synthesis and Applications of Noble Metal and Metal Silicide and Germanide 1-Dimensional Nanostructures

Yoon¹,

Yoo²,

Seo³

et al. 2012

Bulletin of the Korean Chemical Society

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This review covers recent developments in our group regarding the synthesis, characterization and applications of single-crystalline one-dimensional nanostructures based on a wide range of material systems including noble metals, metal silicides and metal germanides. For the single-crystalline one-dimensional nanostructures growth, we have employed chemical vapor transport approach without using any catalysts, capping reagents, and templates because of its simplicity and wide applicability. Au, Pd, and Pt nanowires are epitaxially grown on various substrates, in which the nanowires grow from seed crystals by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. We also present the synthesis of numerous metal silicide and germanide 1D nanostructures. By simply varying reaction conditions, furthermore, nanowires of metastable phase, such as Fe 5 Si 3 and Co 3 Si, and composition tuned cobalt silicides (CoSi, Co 2 Si, Co 3 Si) and iron germanides (Fe 1.3 Ge and Fe 3 Ge) nanowires are synthesized. Such developments can be utilized as advanced platforms or building blocks for a wide range of applications such as plasmonics, sensings, nanoelectronics, and spintronics.

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The Cubic B20 Chiral Magnet FeGe

Wang,

Wei,

2024

Adv Funct Materials

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The cubic B20 chiral magnet FeGe has garnered significant attention for its exceptional capacity to host topological skyrmions. These skyrmions are not only compact, with dimensions ≈80 nm, but also display exceptional stability near room temperature. Moreover, high‐quality cubic FeGe single crystals and nanostructures are successfully fabricated. These characteristics make cubic FeGe an intriguing material for the investigation of topological magnetism and its potential applications in spintronics. Recognizing the critical role that cubic FeGe plays in the field of magnetism, this review delves into the material, emphasizing the synthesis methods for FeGe single crystals and nanostructures, as well as the distinctive features of the topological magnetic structures they support. This study particularly highlight the progress in controlling the magnetic structures for device applications. The electric controllability of topological skyrmions in FeGe nanostructures is discussed as a pivotal step toward the development and application of skyrmionic devices.

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Itinerant Helimagnetic Single-Crystalline MnSi Nanowires

Cited by 39 publications

References 47 publications

Si-Based Magnetic Semiconductors

Si-Based Magnetic Semiconductors

Synthesis and Applications of Noble Metal and Metal Silicide and Germanide 1-Dimensional Nanostructures

The Cubic B20 Chiral Magnet FeGe

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