ITO surface ball formation induced by atomic hydrogen in PECVD and HW-CVD tools

Lan, Je Hsiung; Kanicki, Jerzy

doi:10.1016/s0040-6090(97)00173-9

Cited by 43 publications

(37 citation statements)

References 6 publications

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“…A similar morphology was observed on the surface of sputtered ITO films by Lan and Kanicki. 49 They had treated their samples either by hot-wire chemical-vapor deposition or PECVD.…”

Section: Discussionmentioning

confidence: 99%

“…45 Application-oriented works repeatedly reported the occurrence of metallic indium in different ITO layers. 4,10,[46][47][48] This formation is usually driven by strongly reducing conditions such as plasma-enhanced chemical-vapor deposition ͑PECVD͒, 39,49 ultrahigh vacuum ͑UHV͒, 5,12 and hydrogen gas 38 or acids in wet chemistry. 40,41 But also the neutrondiffraction study of González et al mentioned the occurrence of metallic indium after a reduction with the forming gas.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Günther¹,

Schierning²,

Theissmann³

et al. 2008

Journal of Applied Physics

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The correlation between defect structure, metal segregation, and electrical resistivity of indium-tin-oxide nanopowder upon treatment in reducing atmosphere was investigated. Morphology and defect structure have been investigated by in situ synchrotron x-ray diffraction and transmission electron microscopy, while traces of metallic indium have been detected by susceptibility measurements utilizing the superconducting properties of indium. With increasing treatment temperature under reforming gas the film resistivity decreases down to = 1.6 ϫ 10 −2 ⍀ cm at 330°C annealing temperature. For even higher treatment temperatures, the resistivity increases further. This is accompanied by extractions of metallic indium. Under forming gas, grain growth could be observed at 350°C, while in air grain growth starts at 650°C. Furthermore forming gas causes a lattice expansion of ITO which persists in oxygen, at least for several hours. The results are discussed with respect to results published in the literature.

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“…A similar morphology was observed on the surface of sputtered ITO films by Lan and Kanicki. 49 They had treated their samples either by hot-wire chemical-vapor deposition or PECVD.…”

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Günther¹,

Schierning²,

Theissmann³

et al. 2008

Journal of Applied Physics

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show abstract

“…Especially, when the ITO film was exposed to H 2 plasma for 40 min, the resistivity was so high that it could not be measured in this work. This high resistivity is a result of the composition change of ITO films and surface microstructure [7]. Fig.…”

Section: Effects Of Hydrogen Plasma Treatmentmentioning

confidence: 98%

“…The surface of the ITO films became rough and milky-like appearance after H 2 plasma exposure, especially at high power and for long time. This can be explained by the hydrogen reaction with oxygen bonded in the film surface, which leads to the reduction of ITO to their metallic elements [2,7]. Fig.…”

Section: Effects Of Hydrogen Plasma Treatmentmentioning

confidence: 99%

Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO films

Lee

Lim

Yang

et al. 2011

Journal of Crystal Growth

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“…The SEM data indicate that the AZO thin films are stable when exposed to plasma power less than 100 W, whereas the morphology of the AZO surfaces changed when the films were exposed to H 2 plasma power more than 100 W because the plasma has enough energy to react with AZO. This phenomenon can be explained by the reaction of H 2 with oxygen bonded to the film's surface, which leads to the surface reduction of aluminum and ZnO to their metallic elements [7]. For a highly efficient a-Si solar cell, the RF plasma power should be less than 100 W; this would prevent chemical reduction during the formation of an a-Si layer on AZO.…”

mentioning

confidence: 99%

Stability against hydrogen plasma exposure of Al‐doped zinc oxide thin film for a‐Si thin film solar cell

Yoo

Lim

Choi

et al. 2011

Phys. Status Solidi (c)

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In this study, the stability of Al‐doped zinc oxide (AZO) films under hydrogen (H2) plasma exposure was investigated. The plasma power was varied from 60 to 300 W, and the exposure time was also varied from 10 to 60 min to investigate the stability of the films against H2 plasma. Surface morphologies of the AZO films did not change much after H2 plasma exposure. The average optical transmittance was 87.4% at a plasma power of 60 W and decreased to 70.9% when the plasma power was 300 W. The electrical properties, including mobility and resistivity, were improved by plasma treatment. The characteristics of AZO films after H2 plasma exposure showed negligible differences in morphology and improved optical and electrical properties, which implies that the prepared AZO films have a strong resistance to H2 plasma exposure up to an RF power of 60 W for 20 minutes. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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ITO surface ball formation induced by atomic hydrogen in PECVD and HW-CVD tools

Cited by 43 publications

References 6 publications

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO films

Stability against hydrogen plasma exposure of Al‐doped zinc oxide thin film for a‐Si thin film solar cell

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