Janus-faced Cu-core periphery formation and Bi phase redistribution under current stressing in Cu-cored Sn58Bi solder joints

Mu, Wenkai; Zhou, Wei; Li, Baoling; Wu, Peng

doi:10.1016/j.jallcom.2013.09.099

Cited by 10 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The pin count increases to meet the demands of rapid signal transmission and high current load [28]. Thus, the electrical property of a solder becomes one of the most important factors [29][30][31]. In the literature, however, there is not much research on the electrical properties of low melting point solders.…”

Section: Electrical Conductivity Modification By Supplementation Withmentioning

confidence: 99%

“…Thus, determining the electrical property for a low melting point solder can be of great use to researchers and engineers, especially those who design solder alloys. Meanwhile, the eutectic Sn-Bi solder has a relatively high electrical resistivity of 30-35 μΩ·cm due to the electrical resistivity of Bi (115 μΩ·cm), while the eutectic Sn-In solder has a very low electrical resistivity of 10-15 μΩ·cm due to the electrical resistivity of In (8 μΩ·cm) [30]. .…”

Section: Electrical Conductivity Modification By Supplementation Withmentioning

confidence: 99%

See 1 more Smart Citation

Low Melting Temperature Solder Materials for Use in Flexible Microelectronic Packaging Applications

Kim¹,

Yang²

2017

Recent Progress in Soldering Materials

View full text Add to dashboard Cite

The increasing application of heat-sensitive microelectronic components such as a multitude of transistors, polymer-based microchips, and so on, and flexible polymer substrates including polyethylene terephthalate (PET) and polyimide (PI), among others, for use in wearable devices has led to the development of more advanced, low melting temperature solders (<150°C) for interconnecting components in various applications. However, the current low melting temperature solders face several key challenges, which include more intermetallic compound formation (thus become more brittle), cost issues according to the addition of supplementary elements to decrease the melting point temperature, an increase in the possibility of thermal or popcorn cracking (reliability problems), and so on. Furthermore, the low melting temperature solders are still required to possess rapid electronic/electrical transport ability (high electrical conductivity and current density) and accompany strong mechanical strength sustaining the heavy-uploaded microelectronic devices on the plastic substrates, which are at least those of the conventional melting temperature solders (180-230°C). Thus, the pursuit of more advanced low melting temperature solders for interconnections is timely. This review is devoted to the research on three methods to improve the current properties (i.e., electrical and thermomechanical properties) of low melting temperature solders: (i) doping with a small amount of certain additives, (ii) alloying with a large amount of certain additives, and (iii) reinforcing with metal, carbon, or ceramic materials. In this review, we also summarize the overall recent progress in low melting temperature solders and present a critical overview of the basis of microscopic analysis with regard to grain size and solid solutions, electrical conductivity by supplementation with conductive additives, thermal behavior (melting point and melting range) according to surface oxidation and intermetallic compound formation, and various mechanical properties.

show abstract

Section: Electrical Conductivity Modification By Supplementation Withmentioning

confidence: 99%

Section: Electrical Conductivity Modification By Supplementation Withmentioning

confidence: 99%

Low Melting Temperature Solder Materials for Use in Flexible Microelectronic Packaging Applications

Kim¹,

Yang²

2017

Recent Progress in Soldering Materials

View full text Add to dashboard Cite

show abstract

“…Previous studies found that, in solder interconnects using eutectic Sn-58Bi alloy, EM has a significant influence on the formation of IMC, phase coarsening and accumulation of Bi atoms [6,7]. Although the eutectic microstructure has been confirmed to be highly inhomogeneous in the solder matrix of microscale interconnects by experimental observation, in most experimental and numerical simulation studies, Sn-58Bi alloy was treated as a homogeneous microstructure and composition [6,8]. Due to the lack of both numerical analysis and experimental validation, the interaction effect between EM and inhomogeneity of microstructure in the solder matrix of microscale solder interconnects is still ambiguous.…”

Section: Introductionmentioning

confidence: 99%

Interaction effect between electromigration and microstructure evolution in BGA structure Cu/Sn-58Bi/Cu solder interconnects

et al. 2014

2014 15th International Conference on Electronic Packaging Technology

View full text Add to dashboard Cite

Dimension of solder interconnects (or joints) and pitches has been continuously scaling down, resulting in inhomogeneous microstructure and severe electromigration (EM) effect in solder interconnects. In this study, the interaction effect between electromigration and microstructure evolution in ball grid array (BGA) structure Cu/Sn-58Bi/Cu solder interconnects under a direct current density of 1.5×10 8 A/m 2 is studied by cellular automaton (CA) modeling embedded with finite element (FE) simulation. Results show that, compared with configuration or geometry of BGA interconnects, the influence of inhomogeneous eutectic phases on the distribution of current density is more obvious. The current density in the Sn-rich phase is much higher than that in the Bi-rich phase. Bi atoms in Sn-rich phase are more prone to migrate to the anode first, rather than migrating directly along the interface between Bi-rich phase and Sn-rich phase. Consequently, the damage in the Sn-rich phase, rather than at phase interfaces or in the Bi-rich phase, could usually be observed in experiments. By employing the criterion of EM induced atomic flux of Bi in FE analysis under CA rules, simulation results of Bi-rich phase segregation are consistent with the experimental observation under current stressing.

show abstract

Effects of GNSs addition on the electromigration of Sn58Bi and Cu-core Sn58Bi joint

Liu

Guo

2022

J Mater Sci

View full text Add to dashboard Cite

Janus-faced Cu-core periphery formation and Bi phase redistribution under current stressing in Cu-cored Sn58Bi solder joints

Cited by 10 publications

References 17 publications

Low Melting Temperature Solder Materials for Use in Flexible Microelectronic Packaging Applications

Low Melting Temperature Solder Materials for Use in Flexible Microelectronic Packaging Applications

Interaction effect between electromigration and microstructure evolution in BGA structure Cu/Sn-58Bi/Cu solder interconnects

Effects of GNSs addition on the electromigration of Sn58Bi and Cu-core Sn58Bi joint

Contact Info

Product

Resources

About