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Vil'k, Yu. N.; Chupov, V. D.; Shvaiko-Shvaikovskii, V. E.; Garshin, A. P.

doi:10.1023/a:1011384129992

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…Defects on hBN generally have a sub-nanoseconds lifetime and are formed from either ion irradiation, chemical etching, or plasma etching [123] . The reason why the single photon emitter can be made in the hBN is mainly due to crystallographic defects [128,129] but the detailed mechanisms are still under debate. Therefore, these emitters usually have problems of uneven spectral distribution, multi-photon emission and low single photon purity, etc.…”

Section: Hbn-base Spesmentioning

confidence: 99%

III–V compounds as single photon emitters

Wang¹,

Xu²,

Jiang³

et al. 2019

J. Semicond.

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Single-photon emitters (SPEs) are one of the key components in quantum information applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high purity and distinguishability. SPEs can also be integrated in photonic circuits for scalable quantum communication and quantum computer systems. Quantum dots made from III-V compounds such as InGaAs or GaN have been found to be particularly attractive SPE sources due to their well studied optical performance and state of the art industrial flexibility in fabrication and integration. Here, we review the optical and optoelectronic properties and growth methods of general SPEs. Subsequently, a brief summary of the latest advantages in III-V compound SPEs and the research progress achieved in the past few years will be discussed. We finally describe frontier challenges and conclude with the latest SPE fabrication science and technology that can open new possibilities for quantum information applications.

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Section: Hbn-base Spesmentioning

confidence: 99%

III–V compounds as single photon emitters

Wang¹,

Xu²,

Jiang³

et al. 2019

J. Semicond.

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“…Similarly, the memristor device transfers the signal from the top electrode (Pt) to the bottom electrode (TiN) via the BN layer. Nitrogen ions and nitrogen vacancies that coexist in BN layer due to the presence of anti-Frenkel pairs could affect resistive switching [44,45]. Figure S2 illustrates the multilevel characteristics achieved by varying the compliance current and reset voltage.…”

Section: Resultsmentioning

confidence: 99%

Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

Pyo,

Jang,

et al. 2023

Materials

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The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride (BN) have been extensively reported, but those of amorphous BN have been insufficiently explored for memory applications. Herein, we fabricated a Pt/BN/TiN device utilizing the resistive switching mechanism to achieve synaptic characteristics in a neuromorphic system. The switching mechanism is investigated based on the I–V curves. Utilizing these characteristics, we optimize the potentiation and depression to mimic the biological synapse. In artificial neural networks, high-recognition rates are achieved using linear conductance updates in a memristor device. The short-term memory characteristics are investigated in depression by controlling the conductance level and time interval.

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