Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS

Barletta, Giacomo; Currò, Giuseppe

doi:10.1016/j.microrel.2004.11.008

Cited by 11 publications

(2 citation statements)

References 4 publications

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“…Fatal failure induces more than two decades increase in leakage current and a drastic reduction of the breakdown voltage. However, during pulses repetition, we also observed an increase of the leakage current that is activated by charge trapping at the silicon-oxide interface [12]. In the following, it is demonstrated that melted points, melted filament and the small rise of leakage current are three phenomena independent from each other.…”

Section: B Electrical Mechanismsmentioning

confidence: 50%

Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

Diatta

Trémouilles

Bouyssou

et al. 2012

IEEE Trans. Electron Devices

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In electronic systems the ever-increasing level of integration is paced by component scaling. Consequently, system level protection improvements in electrostatic discharge (ESD) reliability during a device's lifetime is mandatory. To this end we have investigated bidirectional system level ESD protection diodes that have been subjected to repetitive HMM stresses. Our goal was to develop robust ESD components by understanding the physical and electrical behaviors of components after multiple ESD surges. In this paper, three ESD-induced failure modes of protection devices are demonstrated and analyzed in terms of severity: charge trapping in the silicon-oxide interface, metallic diffusion towards the contacts and melted filaments in the silicon bulk at the junction periphery.

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Section: B Electrical Mechanismsmentioning

confidence: 50%

Understanding the Failure Mechanisms of Protection Diodes During System Level ESD: Toward Repetitive Stresses Robustness

Diatta

Trémouilles

Bouyssou

et al. 2012

IEEE Trans. Electron Devices

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“…The DC/DC converter circuit mainly composed of input filter, power conversion, transformer, rectifier filtering, sampling compare, optocoupler, PWM and accessorial power supply [1], as shown in Figure 1. The power VDMOS devices, PWM and transformer are key components of DC/DC converter [1][2][3]. Generally, the reliability of DC/DC converter is significantly affected by the reliability of these key components.…”

Section: Failure Analysis Methodsmentioning

confidence: 99%

Reliability and failure analysis of DC/DC converter and case studies

Yao¹,

Chen²,

He³

et al. 2013

2013 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE)

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The switching power has been used in worldwide step by step. DC/DC converter is the core of a switching power. The research of reliability and failure analysis of the DC/DC converters is important to make products reliable and to maintain its performance under different loads. Based on the long-term experience of DC/DC converter failure analysis, two kinds of key failure modes of DC/DC converter which were component failure and assembly failure respectively were studied. In order to prevent the failure occurrence and ensure the reliability of DC/DC converter, several failure analysis case studies were given and the failure mechanisms and possible root causes of failure were investigated. Finally, several failure prevention methods were suggested.

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