Ka-band power PHEMT on-wafer characterization using prematched structures

Sharma, Arvind Kumar; Dow, G.S.; Aust, M.V.; Canyon, J.; Allen, B.; Sungsine, Pak; Yang, Daniel C. H.; Hwang, Y.; Tan, K. H.

doi:10.1109/mwsym.1993.277125

Cited by 10 publications

(1 citation statement)

References 4 publications

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“…These plots not only provide the accuracy of models but also provide a side-by-side comparison of the device performance. Using the procedure described in [5], load pull data on V-band prematched structures were obtained. Since these structures only use transmission lines, it is easy to de-embed these transforming networks from the on-wafer measurements to obtain device load pull impedance information.…”

Section: Hemt Device Modelsmentioning

confidence: 99%

A V-band high-efficiency pseudomorphic HEMT monolithic power amplifier

Sharma¹,

Onak²,

Lai³

et al. 1994

IEEE Trans. Microwave Theory Techn.

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This paper presents a high-power and high-efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 pm InGaAdAlGaAdGaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.8 dB small signal gain, 13.9% power-added efficiency, and 26.83 dBm (482 mW) compressed power output at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.2 dB, 11% poweradded efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests.

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Section: Hemt Device Modelsmentioning

confidence: 99%

A V-band high-efficiency pseudomorphic HEMT monolithic power amplifier

Sharma¹,

Onak²,

Lai³

et al. 1994

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

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Millimeter‐Wave Integrated Circuits

Wang,

Lin,

Liu

et al. 2005

Encyclopedia of RF and Microwave Engineering

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Millimeter‐wave (MMW) components are becoming more available and affordable because of advances in design, processing, testing, and packaging technology. MMW circuits have become smaller, highly integrated, and low‐cost, and are being applied in instrumentation, electronic warfare, satellite communications and other applications. As a result, many MMW systems are being developed and deployed that provide new and unique capabilities such as more information transfer (wider bandwidth), enhanced precision (higher resolution), and all‐weather operation (through fog, dust, and smoke), for both military and commercial applications. Monolithic MMW integrated circuits (MMICs) are crucial to meet the requirements for the MMW systems and play an important role in the MMW components. This article describes the current status of MMW monolithic integrated circuits, including the MMIC technologies, representative designs, and performance for various integrated circuits.

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Test and Reliability

Allen

1996

Pseudomorphic HEMT Technology and Applications

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Ka-band power PHEMT on-wafer characterization using prematched structures

Cited by 10 publications

References 4 publications

A V-band high-efficiency pseudomorphic HEMT monolithic power amplifier

A V-band high-efficiency pseudomorphic HEMT monolithic power amplifier

Millimeter‐Wave Integrated Circuits

Test and Reliability

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