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Two-temperature RF-stressed acceluated life test on discrete pseudomorphic InGaAs power HEMT devices at 60 GHz shows a failure mode with an activation energy of 1.6 eV. The projected mean time-to-failure of 1 E7 hours at 125 OC channel temperature indicates that this device technology can be highly reliable for critical applications at millimeter-wave frequencies.

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This paper presents a high-power and high-efficiency monolithic power amplifier at V-band utilizing highly reliable and manufacturable 0.15 pm InGaAdAlGaAdGaAs pseudomorphic HEMT fabrication technology. The performance of the power amplifier is 13.8 dB small signal gain, 13.9% power-added efficiency, and 26.83 dBm (482 mW) compressed power output at 60 GHz for unpassivated HEMT process. The same circuit with passivated process produced a linear gain of 13.2 dB, 11% poweradded efficiency, and compressed output power of 25.68 dBm (370 mW). The producibility of this amplifier has been demonstrated in volume production with several wafer lots resulting in a 20% total yield through RF tests.

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