2018
DOI: 10.1364/ao.57.000e64
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Key enabling technologies for optical communications at 2000  nm

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Cited by 30 publications
(8 citation statements)
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References 37 publications
(45 reference statements)
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“…We also explore the performance of these passive components around 2 µm. Indeed, this spectral window currently stimulates large experimental interest due to its potential use as a solution to the capacity crunch [5] : platforms such as Si, SRN, SiGe have been recently successfully tested in the context of high speed optical telecommunications [6,7]. After having described the design of the TiO2 devices we detail experimental set-ups and validation of the components for error-free transmission of 10 Gb/s on-off keying signals.…”
Section: Titanium Dioxide Structures For Optical Communicationsmentioning
confidence: 99%
“…We also explore the performance of these passive components around 2 µm. Indeed, this spectral window currently stimulates large experimental interest due to its potential use as a solution to the capacity crunch [5] : platforms such as Si, SRN, SiGe have been recently successfully tested in the context of high speed optical telecommunications [6,7]. After having described the design of the TiO2 devices we detail experimental set-ups and validation of the components for error-free transmission of 10 Gb/s on-off keying signals.…”
Section: Titanium Dioxide Structures For Optical Communicationsmentioning
confidence: 99%
“…We show single-mode lasing around 1.9 μm using a monolithic thulium-doped tellurite gain medium and efficient pumping at wavelengths around 1.6 μm, where silicon is highly transparent and commercial pump light sources are readily available. Besides demonstrating an effective and low-cost approach to rare-earth gain for silicon photonic microsystems, such lasers provide an incentive for expanding applications in an emerging 2-μm wavelength band, which is of interest for communications, nonlinear and quantum optics, and sensing [30][31][32][33] and is motivated by silicon's lower two-photon absorption and the recent development of efficient monolithic passive and active silicon devices in this range. [34][35][36][37] Optical gain and lasing in a hybrid rare-earth silicon structure opens the door to on-chip amplifiers for low-loss circuits and versatile integrated laser designs, using the wideband rare-earth gain available in different near-and mid-infrared wavelength regions of interest [38] and the high-performance passive and active functionality in the silicon layer, on silicon photonics platforms.…”
Section: Introductionmentioning
confidence: 99%
“…In the meantime, active optical fibers (e.g. thulium-or holmium-doped fibers (TDF/HDF)) can provide a high and broadband gain window at the two micron spectral band outside the traditional 1550 nm telecom band [2], [3]. Over the past few years, the developments in the 2-μm band including high-performance laser sources [4], [5], broad bandwidth amplifier [6], high-speed optical modulators [7] and photodetector [8], and the benchmark low-loss hollow-core photonic bandgap fibers (HC-PBGFs) [9], have enabled a wide range of applications not only for telecom [10], but also for sensing and biomedical monitoring [11].…”
Section: Introductionmentioning
confidence: 99%