Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐  HF  Solutions

Ven, J. van de; Weyher, J.L.; Meerakker, J. E. A. M. van den; Kelly, J. J.

doi:10.1149/1.2108680

Cited by 73 publications

(26 citation statements)

References 19 publications

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“…From an extensive study of GaAs etching in CrO3-HF solutions reported elsewhere (10), it was clear that the ratio of the HF and CrQ concentrations is very important for the etching kinetics. Consequently, the etching and electrochemical results, described in this section, are classified on the basis of this ratio.…”

Section: Resultsmentioning

confidence: 99%

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The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: I . Experimental Results

Ven¹,

Meerakker²,

Kelly³

1985

J. Electrochem. Soc.

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The etching kinetics and electrochemistry of GaAs in aqueous CrO3-HF solutions were studied. For solutions with a low [HF]/[CrO3] ratio, etch rates in the dark depend only on the HF concentration and are similar for n-type and p-type GaAs. Illumination strongly increases the etch rate of n-type material but has no effect on p-type dissolution. From current and impedance measurements, it was concluded that Cr w reduction gives rise to a passivating film on GaAs, which inhibits further hole injection from the oxidizing agent. The limiting quantum efficiencies for Crv' reduction at illuminated p-type electrodes and for GaAs dissolution at n-type electrodes are significantly greater than unity. At higher [HF]/[CrO~] ratios the etch rate of both n-and p-type GaAs is determined by Cr v~ diffusion in solution. Conclusions concerning the etching mechanism are drawn on the basis of these results. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2014-09-28 to IP Vol. 132, No. 12 GaAs ETCHING 3021All measurements were performed at room temperature.ABSTRACT A model is presented to describe the dissolution of GaAs in CrO3-HF solutions, both in the dark and under illumination. The etching kinetics are shown to be mainly determined by the mechanism of Cr vI reduction at GaAs. An essential feature of the model is the formation of an adsorbed mixed-valence chromium complex which passivates the semiconductor surface. A novel reaction between the adsorbed complex and a surface-state intermediate of the GaAs oxidation reaction is proposed to account for the many surprising aspects of the etching and electrochemical kinetics.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 165.123.34.86 Downloaded on 2014-09-28 to IP

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Section: Resultsmentioning

confidence: 99%

“…In the second part of this paper, a model is proposed which can explain both the etching and electrochemical results. The morphological aspects of etching in CrO~-HF solutions will be discussed in a separate paper (10).…”

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confidence: 99%

The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: I . Experimental Results

Ven¹,

Meerakker²,

Kelly³

1985

J. Electrochem. Soc.

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“…The total morphology of the etch features depends, however, upon both the crystallographic and chemical nature of the defect, often assuming a complex shape. 4,5 The mechanism of electroless etching, studied in detail in GaAs and InP, 3,6,7 involves multistep reactions taking place simultaneously at the semiconductor surface. These reactions are: reduction of oxidizing agent followed by injection of holes into the solid, oxidation of the solid using holes, and dissolution of the products.…”

Section: Introductionmentioning

confidence: 99%

Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

Weyher¹,

Tichelaar²,

Zandbergen³

et al. 2001

Journal of Applied Physics

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Photoelectrochemical (PEC) etching has been used to study defects in heteroepitaxial GaN layers. In Ga-polar layers PEC etching reveals only dislocations in the form of filamentary etch features (whiskers). Transmission electron microscopy (TEM) confirmed a one-to-one correspondence between the whiskers and straight threading dislocations, which are mainly of edge and mixed type. In N-polar layers, apart from dislocations, inversion domains (IDs) also give rise to the formation of more complex etch features that also have been confirmed by TEM. IDs of nanometer diameter result in formation of whiskers similar to the dislocation-related ones. However, when the diameter of IDs exceeds a critical size (about 100 nm), crater-like deep etch features are formed during PEC etching. Based on the mechanism of PEC etching of GaN in aqueous KOH solutions, it is argued that inversion domain boundaries are electrically active defects.

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“…11) We measured the etch pit density (EPD) using a solution of CrO 3 -HF-H 2 O with ½HF=½CrO 3 ¼ 3 and ½HF ¼ 5M (M: mole/l). 18) The EPD was 4 Â 10 5 cm À2 , which is less than the TD density determined using p-TEM. The EPD underestimated the true TD density.…”

Section: Resultsmentioning

confidence: 71%

Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates

Takano

Kobayashi

Uranishi

et al. 2010

Jpn. J. Appl. Phys.

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We have studied single-electron turnstile operation in common-gated one-dimensional arrays of four tunnel junctions ͑three dots͒ having inhomogeneous junction capacitances. Analytical calculations show that the source-drain voltage range with a current plateau due to single-electron turnstile operation is increased when the outer two tunnel capacitances are adjusted to be smaller than the inner ones. In fact, we have demonstrated in phosphorous-doped silicon-on-insulator field-effect transistors ͑FETs͒ that back-gate voltage works to assist the turnstile operation, which is primarily ascribed to electrical control of junction capacitance dispersion, i.e., reduction in outer junction capacitances. As a result, postfabrication control of capacitance dispersion in multijunction FETs can be achieved, resulting in successful turnstile operation.

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Kinetics and Morphology of GaAs Etching in Aqueous CrO3 ‐ HF Solutions

Cited by 73 publications

References 19 publications

The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: I . Experimental Results

The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: I . Experimental Results

Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

Threading Dislocations in InGaAs CaP Layers with InGaAs Graded Layers Grown on Si Substrates

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