Kinetics of Chemical Vapor Deposition of Boron Thin Film on Tungsten Substrate

Sekine, Toshiaki; Nakanishi, Naruhiko; Kato, Eiichi

doi:10.2320/jinstmet1952.53.7_698

Cited by 9 publications

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“…The decomposition of BCl 3 in a hydrogen-rich CVD reactor is however not fully characterized. Most experimental papers [2][3][4][5] report only on deposition rates, while little or no information is given on the gas phase decomposition of BCl 3 . Nonetheless, Sezgi et al [2] indicate that BHCl 2 is the main gaseous product in atmospheric pressure CVD.…”

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical investigation of BCl3 decomposition in H2

Reinisch

Leyssale

Bertrand

et al. 2008

Surface and Coatings Technology

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A combined experimental and theoretical study of the homogeneous decomposition of BCl 3 in a H 2 carrier gas is presented. A detailed description of the B/Cl/H thermodynamic equilibrium is first obtained from ab initio calculations from which a restricted low energy chemical mechanism is identified to model the decomposition of BCl 3. Transition state theory is then invoked to obtain reaction rates and the resulting kinetic mechanism is incorporated in a 1D model of a CVD reactor. Comparison of calculated steady state concentrations with in situ FT-IR measurements shows a good agreement at low temperatures, thus validating the kinetic model. The divergence observed at higher temperatures is attributed to boron deposition.

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Section: Introductionmentioning

confidence: 99%

Experimental and theoretical investigation of BCl3 decomposition in H2

Reinisch

Leyssale

Bertrand

et al. 2008

Surface and Coatings Technology

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“…In most of the previous studies on CVD of boron, the deposition rate was determined either by gravimetric techniques (Sekine et al, 1989;Carlton et al, 1970) or by measurement of the thickness of the deposit using a scanning electron microscope (Jansson et al, 1989;Gruber, 1970;Vuillard, 1976, 1977;Scholtz et al, 1991a). The composition of the product gas was not experimentally measured in any of these studies.…”

Section: Introductionmentioning

confidence: 99%

BHCl₂ Formation during Chemical Vapor Deposition of Boron in a Dual-Impinging Jet Reactor

Sezgi

Doǧu

Özbelge

1997

Ind. Eng. Chem. Res.

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Chemical vapor deposition (CVD) of boron from BCl3 and H2 was investigated in a dual-impinging jet reactor which was connected to an FT-IR spectrometer for on-line chemical analysis of the reactor outlet stream. Formation of the intermediate, BHCl2, during CVD of boron on a hot tungsten substrate was experimentally verified. Boron deposition started at substrate temperatures of around 750 °C and showed a significant deposition rate increase with an increase in temperature. At a surface temperature of 1350 °C, fractional conversion of BCl3 to B and BHCl2 was found to be around 0.6 and 0.2, respectively. At temperatures less than 1100 °C, fractional conversion of BCl3 to BHCl2 was found to be higher than the fractional conversion to boron. Formation of BHCl2 occurs in the gas phase even at temperatures lower than 750 °C. Contribution of surface reactions to the formation of BHCl2 increases with an increase in temperature.

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“…The deposition rate is a key indicator which is likely to be limited by the thermodynamics of the process, the mass transport in the gas phase, the surface kinetics, and the nucleation process . The methods to determine the deposition rate of boron from the BCl 3 H 2 system include recording the weight change of the substrate, measurement of the thickness of the deposit using a scanning electron microscope, and the calculation from Eqn , where x 1 can be evaluated from the experimental data of the products and reactant steam compositions by online chemical analysis of the reactor outlet stream.

R_{B} = {normalA normalR}_{normalB, normals} = F_{0} y_{{B C l}_{3}}^{0} x_{1}

…”

Section: The Reduction Of Boron Halides By Hydrogenmentioning

confidence: 99%

“…Nevertheless, Vandenbulcke and Vuillard observed that when the temperature was between 1223 and 1373K, the ratio of BCl 3 to H 2 was equal to 2 : 3 without any addition of inert gas, and the pressure was 1 atm, the apparent activation energy was 31.4 kcal/mol. Sekine et al . found that there was a change of the reaction mechanism near 1200 K, because the activation energies in the higher temperature range and in the lower temperature range had been determined to be 17.1 and 127.9 kJ/mol, respectively, when the partial pressure of H 2 was 39.7 kPa, BCl 3 was 1.99 kPa, and Ar was 59.6 kPa.…”

Section: The Reduction Of Boron Halides By Hydrogenmentioning

confidence: 99%

A review on the methods of preparation of elemental boron

Zhou

Bai

2015

Asia-Pacific J Chem Eng

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The review presents four main techniques of preparation of elemental boron: molten salt electrolysis, metallic reduction, hydrogen reduction, and decomposition of boron compounds. For electrolysis, the molten salt systems, boron precursors, and mechanisms are summarized. Four kinds of hydrogen reduction of boron compounds are briefly introduced. In chemical vapor deposition process, the purity, conversion rate, morphology, and deposition rate of the produced boron are major concerns. Like hydrogen reduction, decomposition of boron compounds can be used to produce the high-purity and ultra-fine boron, but high-cost and severe reaction conditions limit its applications in large scale. Metal reduction method is improved through new preparation and purification process. All in all, boron powders with high-purity, small size, and narrow size distribution are preferred in the high-tech fields. Additionally, the robust boron nanostructures and more effective and greener synthetic strategies are also anticipated. Figure 3. The flowchart of reduction of boron halides by hydrogen (X refers to F, Cl, Br, or I).Figure 4. The flowchart of reduction of boron compounds with metals. Figure 6. Sketch of the novel procedure to produce nano-sized and amorphous boron.

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Kinetics of Chemical Vapor Deposition of Boron Thin Film on Tungsten Substrate

Cited by 9 publications

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Experimental and theoretical investigation of BCl3 decomposition in H2

Experimental and theoretical investigation of BCl3 decomposition in H2

BHCl₂ Formation during Chemical Vapor Deposition of Boron in a Dual-Impinging Jet Reactor

A review on the methods of preparation of elemental boron

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Kinetics of Chemical Vapor Deposition of Boron Thin Film on Tungsten Substrate

Cited by 9 publications

References 0 publications

Experimental and theoretical investigation of BCl3 decomposition in H2

Experimental and theoretical investigation of BCl3 decomposition in H2

BHCl2 Formation during Chemical Vapor Deposition of Boron in a Dual-Impinging Jet Reactor

A review on the methods of preparation of elemental boron

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Product

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BHCl₂ Formation during Chemical Vapor Deposition of Boron in a Dual-Impinging Jet Reactor