Kinetics of interfacial layer formation during deposition of HfO2 on silicon

Essary, Chad Robert; Howard, Joshua; Crăciun, V.; Crǎciun, D.; Singh, Rajiv K.

doi:10.1016/j.tsf.2003.10.048

Cited by 12 publications

(3 citation statements)

References 8 publications

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“…The large film degradation in the case of Si might be caused by spontaneous SiO 2 formation at the HfO 2 / Si interface. [25][26][27] In the case of SiC with a thin SiO 2 layer ͑W1͒ the breakdown voltage is reduced from 6.6 MV/cm down to 4.7 MV/cm ͑29%͒, together with an increased level of the leakage current This is a confirmation of the poor results obtained for C-V measurements and the total degradation of the thin SiO 2 buffer layer. The only improvement is observed for sample SiC W2, which shows a 0.4 MV/cm ͑9%͒ higher breakdown field due to the thinner SiO 2 layer, as discussed earlier in Sec.…”

Section: E Annealing Of the Hfo 2 Filmsmentioning

confidence: 71%

Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition

Wolborski

Rooth

Bakowski

et al. 2007

Journal of Applied Physics

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Hafnium oxide films with a measured relative dielectric constant of 15.4 were deposited at room temperature on Si and 4H-SiC substrates, as well as on 4H-SiC p-i-n diodes. An 8 nm thick SiO2 interfacial layer on SiC increased the breakdown field of the HfO2∕SiO2 stack by 6%, while a 13 nm thick SiO2 layer reduced it by 35%. The evidence of different current conduction mechanisms in SiO2 is shown to be related to the oxide thickness. For the diodes, the breakdown voltage was extended by at least 20%, compared to nonpassivated devices. Annealing at 400 °C in a forming gas changed the crystallinity and increased the relative dielectric constant of the HfO2 layers. There is an indication of reaction between HfO2 and SiO2 in the stacked films after annealing.

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Section: E Annealing Of the Hfo 2 Filmsmentioning

confidence: 71%

Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition

Wolborski

Rooth

Bakowski

et al. 2007

Journal of Applied Physics

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“…There are various deposition techniques, e.g. evaporation of metal followed by (plasma) oxidation [7][8][9], sputtering techniques [10,11], pulsed laser deposition [12], chemical vapour deposition (CVD) [13][14][15][16] and atomic layer deposition (ALD) [17,18]. A manufacturing process may also contain pre-and/or post-treatment such as heating/annealing in ambient gases.…”

Section: Introductionmentioning

confidence: 99%

UHV-MOCVD growth of TiO2 on SiOx/Si(111): Interfacial properties reflected in the Si 2p photoemission spectra

Karlsson¹,

Richter²,

Andersson³

et al. 2005

Surface Science

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“…In fact, published work indicates that crystallization of HfO 2 into tetragonal phase seems to be preferred when the amorphous precursor has a large surface area 37 and when long-range structural order is inhibited by geometrical constraints 38 or by mixing with other oxides. 39,40 Films of pure HfO 2 grown by PLD at room temperature are typically amorphous, 41 and it is thus not surprising that the as-deposited films studied here are amorphous as well. However, in pure HfO 2 films the development of microcrystallinity upon PDA is expected for annealing temperatures as low as 400-450 • C. [42][43][44] As the contrasting annealing behavior of films with different C/Hf ratios shows, high carbon content has the effect of stabilization of the amorphous structure of HfO 2 , and with a C/Hf ratio ≥0.65 (Fig.…”

Section: Film Microstructuresmentioning

confidence: 84%