Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–x Ge x solid solutions

Orlov, L. K.; Ivin, S. V.

doi:10.1134/s107036321512004x

Cited by 4 publications

(1 citation statement)

References 27 publications

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“…A comparative analysis of the 3C-SiC layer surface morphology is presented for the samples grown at different growth temperatures (650 • C < T gr < 950 • C) but identical other conditions of the technological experiment (t gr = 180 min, P C6H14 = 1 mTorr; P SiH4 ~PGeH4 ~0.3 mTorr, d SiC max (T gr ~950 • C) ~300 nm). The growth temperature determines the disintegration rate of the hexane (CH 3 ) [11,16] and silane (SiH 3 ) [20] molecule fragments adsorbed by growth surface and consequently a number of silicon and carbone adatoms participating in a growth process. The study of the surface morphology of structures obtained at the same molecular flow rates but at different substrate temperatures shows that the surface morphology of the carbide film changes continuously during the growth process.…”

Section: Experimental Details: Technology Crystal Structure Compositi...mentioning

confidence: 99%

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Orlov

Vdovin

Ivina³

et al. 2020

Crystals

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Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of the 3C-SiC films were tested using X-ray diffraction, second ion mass spectrometry, scanning ion and electron microscopy, photo- and cathode luminescence. It was demonstrated that the fine crystal structure of the 3C-SiC islands was formed by the close-packed nanometer-size grains and precipitated on the underlying solid carbonized Si layer. Luminescence spectral lines of the solid carbonized Si layer, separated island and solid textured 3C-SiC layer were shifted toward the high ultraviolet range. The spectra measured by different methods were compared and the nature of the revealed lines was considered. This article discusses a quantum confinement effect observation in the 3C-SiC nanostructures and a perspective for the use of nanotextured island 3C-SiC layers as a two-dimensional surface quantum superlattice for high-frequency applications. The conductivity anisotropy and current-voltage characteristics of the two-dimensional superlattices with a non-additive electron dispersion law in the presence of a strong electric field were studied theoretically. Main efforts were focused on a search of the mechanisms allowing realization of the high-frequency negative dynamical conductivity for the structures having a positive static differential conductivity.

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Section: Experimental Details: Technology Crystal Structure Compositi...mentioning

confidence: 99%

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Orlov

Vdovin

Ivina³

et al. 2020

Crystals

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Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides

2019

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Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy

Orlov

Ivin²,

Фомин

2017

Tech. Phys.

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Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–x Ge x solid solutions

Cited by 4 publications

References 27 publications

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides

Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy

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