Kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide ()

Abstract

The kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (0 0 1) have been determined using reflectance difference spectroscopy for real-time monitoring of the phosphorus coverage. The precursor adsorption rate depends linearly on the coverage, and the initial sticking coefficient varies from 0.007 to 0.001 as the temperature increases from 420 to 520°C. The phosphorus desorption rate is first order in the coverage and exhibits an activation energy and pre-exponential factor of 2:4 AE 0:2 eV and 10 14:7 AE 1:5 s À1 . These reaction kinetics play an important role in the growth of phosphide-based alloys by metalorganic vapor-phase epitaxy. Ó

Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

“…The adsorption rate constant may be approximated as 1 4 nS 0 , where n and S 0 are the mean molecular speed and reactive sticking probability of the precursor. These terms are relatively temperature insensitive [31,32]. Since the mean molecular speed is about the same for each source, one may assume that the differences in the As/P segregation coefficients may be attributed to the ratio S 0,As /S 0,P .…”

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface

“…Using in situ monitoring of the phosphorus coverage by reflectance difference spectroscopy (RDS), Sun et al [13,14] measured the reaction kinetics of PH 3 and TBP with the InP (0 0 1) surface. They observed that the sticking probability of TBP decreases from 0.007 to 0.001 with increasing temperature from 420 to 520°C; whereas the sticking probability of PH 3 is approximately equal to 0.001 over the same range.…”

Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics

“…They used PH 3 and adsorption species can be different from P at low temperature range. Sun et al measured slower desorption rate using TBP as a precursor [18]. Due to ultra high vacuum and lower temperature in their experiments, TBP directly adsorbed on a surface, while large fraction of TBP is decomposed in our experiments.…”

“…Therefore, we appended reaction 13 in Table 3 and considered its rate constant as an adjustable parameter. Surface decomposition of TBP has been suggested by the experiment using a flow tube [21] and that in ultra high vacuum [18]. Addition of the reaction led to successful agreement of y over the susceptor, as shown by the solid line in Fig.…”