Kramers-Kronig analysis of reflection data

Klucker, R.; Nielsen, Ulla Gro

doi:10.1016/0010-4655(73)90099-4

Cited by 21 publications

(8 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…was used [12], with hw, = 5 eV and the exponent iy chosen in such a way as to obtain the best fit to the phase 0 calculated from the experimental points of n and k (see Fig. 2 and 3).…”

Section: R ( W ) = R(w)mentioning

confidence: 99%

Optical properties of manganese ferrites

Šimša

Široký

Lukeš

et al. 1979

Physica Status Solidi (b)

View full text Add to dashboard Cite

The near normal reflectance spectrum together with the data on the index of refraction and the extinction coefficient are combined in a Kramers-Kronig analysis to obtain the spectral dependences of the real and the imaginary parts of the diagonal elements of the dielectric function of the single crystal series Mn,Fes-,O, for 0 5 z 5 1.6. One-oscillator fit t o optical constants is used to show that the main rise in absorption at about 2 eV is due to the ad-crystal field transitions of the Fe3+ and/or Mn2+ ions in tetrahedral sites. The anomalous behaviour of optical constants below-1 eV in iron rich Mn-ferrites is ascribed to the presence of charge carriers (Fez+) in octahedral sites.Das bei fast normalem Lichteinfall gemessene Reflexionsspektrum wird zusammen mit den Werten des Brechungsindex und des Extinktionskoeffizienten fur die Kramers-Kronig-Analyse benutzt, um die SpektralabhLngigkeit der Real-und Imaginarteile der Diagonalelemente der Dielektrizitatsfunktion von Mn,Fes-,O,-Einkristallen (0 5 z 5 1,6) zu erhalten. Die Anpassung der optischen Konstanten an das Ein-Oszillator-Model1 zeigt, daB fur den Hauptanstieg der Absorption um etwa 2 eV die 3d-Kristallfeldiibergange der Fe3+-und/oder Mn2+-Kationen in den Tetraederplatzen verantwortlich sind. Das anomale Vehalten der optischen Konstanten unterhalb 1 eV in eisenreichen Manganferriten wird der Anwesenheit von Ladungstragern (Fez+) in Oktaederplatzen zugeschrieben.Na Slovance 2, 18040 Praha 8, Czechoslovakia. z, KotlGskiL 2, 61137 Brno, Czechoslovakia.

show abstract

“…was used [12], with hw, = 5 eV and the exponent iy chosen in such a way as to obtain the best fit to the phase 0 calculated from the experimental points of n and k (see Fig. 2 and 3).…”

Section: R ( W ) = R(w)mentioning

confidence: 99%

Optical properties of manganese ferrites

Šimša

Široký

Lukeš

et al. 1979

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The optical constants can be derived by means of the Kramers-Kronig relations from measured values of reflectivity as a function of frequency following the general treatment of Roessler [38] and the related computer program of Klucker and Nielsen [39,40]. Absolute reflection spectra were obtained for variously polished surfaces using either_P or S polarization with respect to the (1102) surface.…”

Section: Optical Test For the Surface Quality Of Sapphire Substratesmentioning

confidence: 99%

“…(J. D. Farina and D. L. Blackburn) INDEX acoustic emission [46][47][48][49] acoustic microscopy 61 alignment test structure [40][41] argon Ion penetration depth [16][17] ASTM Method F 43 7-8 ASTM Method F 84 7-8 Auger electron spectroscopy 14-15; [16][17][18][19] beam-lead bonding [46][47][48][49] bias-temperature stress test 27-28 boron redistribution [24][25] capacltance [23][24] emitter-only switching method 62; [62][63][64] flame emission spectrometry [19][20] flying-spot scanner 58 four-probe array, square [39][40] four-probe method 7-8; [39][40] gross leak tests [55][56] hermeticlty [53][54][55][56][57] hydrogen chloride oxidation [35][36] Infrared mlcroradlometer 62; [62][63][64] Infrared reflectance method [20][21][22][23] Integrated circuits 58; 62-64 Interface states …”

Section: Circuitsmentioning

confidence: 99%

Semiconductor measurement technology

Bullis¹

1976

View full text Add to dashboard Cite

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Both in-house and contract efforts are included. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period included (1) preliminary results of a systematic study of the effects of surface preparation on spreading resistance measurements; (2) development of an optical test for surface quality of sapphire; (3) development of a basis for an exposure sensitivity specification for photoresists; and (4) development of a modular cell concept for test structure design and layout. Also reported are the results of work on four-probe resistivity measurements, comparison of techniques for surface analysis, ion microprobe mass analysis, analysis of process chemicals with flame emission spectrometry, redistribution profiles, thermally stimulated current response of interface states, bias-temperature stress test measurements on MOS capacitors, a high voltage capacitance-voltage method for measuring characteristics of thick insulator films, hydrogen chloride oxidation, ion implantation parameters, methods for determining integrity of passivation overcoats, measurement of free sodium in an oxidation furnace by resonance fluorescence, a square array collector resistor test structure, an electrical alignment test structure, two dimensional wafer maps, test pattern design and analysis for silicon-on-sapphire MOS device technologies^a nondestructive acoustic emission test for beam-lead bonds, wire bond pull test, bondability of doped aluminum metallizations, leakage into double hermetic enclosures, a static expansion dry gas gross leak test, correlation of moisture infusion in semiconductor packages with leak size and device reliability, an automated scanning lowenergy electron probe, an optical flying-spot scanner, scanning electron microscopy, scanning acoustic microscopy, and thermal resistance measurements on power transistors and simple integrated circuits. Supplementary data concerning staff, publications, workshops and symposia, standards committee activities, and technical services are also included as appendices.

show abstract

“…Either absolute or relative values of the optical constants [refractive index (n) and the absorption index (k) ] are the parameters for quantifying the magnitude of the observed forbidden modes. Absolute values of the constants are obtained from numerical analysis of reflectance data using Kramers-Kronig relations following the general treatment of Roessler [34] and the related computer program of Klucker and Nielsen [35]. Initial sapphire surfaces.…”

Section: Optical Test For Surface Quality Of Sapphire Substratesmentioning

confidence: 99%

Semiconductor measurement technology

Bullis¹

1976

View full text Add to dashboard Cite

show abstract

Kramers-Kronig analysis of reflection data

Cited by 21 publications

References 1 publication

Optical properties of manganese ferrites

Optical properties of manganese ferrites

Semiconductor measurement technology

Semiconductor measurement technology

Contact Info

Product

Resources

About