Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

Wadhwa, Girish; Raj, Balwinder

doi:10.1007/s11664-018-6343-1

Cited by 106 publications

(29 citation statements)

References 20 publications

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“…The barrier width of the tunneling junction becomes less susceptible to the drain voltage with the Lg increases, the line tunneling area and the electron tunneling number increase, thereby increasing the on-state current of H-DLTFET. However, the on-state current rises slowly and the preparation process becomes complicated when the channel length exceeds 20 nm [26,27]. It can be concluded that the optimal Hc and Lg are 5 nm and 20 nm, respectively.…”

Section: Discussion Of Simulation Resultsmentioning

confidence: 99%

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

et al. 2019

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A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase the electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to improve the gate-to-channel control. In addition, the effects of Ge content, electrode work functions, and device structure parameters on the performance of H-DLTFET are researched in detail, and then the above optimal device structure parameters can be obtained. Compared to the DLTFET, the simulation results show that the maximum on-state current, trans-conductance, and output current of H-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by two orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same time, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and 0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the ultra-low power integrated circuits.

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Section: Discussion Of Simulation Resultsmentioning

confidence: 99%

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

et al. 2019

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“…Many researchers suggested the electrically doped TFET is the way to overcome the problems faced by physical doping [15]. By blending the advantages of charge plasma and doping less a novel architecture of charge plasma based gate underlap DMTFET is presented in [49]. The structure is given in the by Fig.…”

Section: Charge Plasma Based Tfet Biosensorsmentioning

confidence: 99%

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity

Reddy¹,

Panda²

2020

Silicon

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In this fast-growing technological world biosensors become more substantial in human life and the extensive use of biosensors creates enormous research interest among researchers to define different approaches to detect biomolecules. The FET based biosensors have gained a lot of attention among all because of its high detection ability, low power, low cost, label-free detection of biomolecules, and CMOS compatible on-chip integration. The sensitivity of the biosensor inversely proportional to device size since they detect low concentration yields quick response time. Although FET based biosensor is having a lot of advantages among others but the short channel effects (SCE's) and the theoretical limitation on the subthreshold swing (SS > 60mv/dec) of the FET leads to restrict device sensitivity and also have higher power dissipation due to the thermionic emission of electrons. To avoid these problems researchers focus shifts to the new technology FET based biosensors i.e. TFET based biosensors which are having low power and superior characteristics due to Band to band tunneling of carrier and steep subthreshold swing. This manuscript describes the full-fledged detail about the TFET based biosensors right from unfolding the device evaluation to biosensor application which includes qualitative and quantitative parameters analysis study like sensitivity parameters and different factors affecting the sensitivity by comparing different structures and the mechanisms involved. The manuscript also describes a brief review of different sensitivity parameters and improvement techniques. This manuscript will give researchers a brief idea for developing for the future generation TFET biosensors with better performance and ease of fabrication.

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“…For example, a chargedplasma base gate underlap dielectric modulated junctionless TFET (DM-JLTFET) has the potential to provide superior sensitivity and low cost for developing biomedical sensors. 45 The different properties of the materials such as high charge mobility or mechanical strength have also added diversity into the field of FET biosensors. The graphene FET-based biosensors, extensively covered in Ref.…”

Section: Current Scenariomentioning

confidence: 99%

Recent Advances and Progress in Development of the Field Effect Transistor Biosensor: A Review

Wadhera

Kakkar

Wadhwa

et al. 2019

Journal of Elec Materi

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150

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The vital utilization of biosensors in different domains has led to the design of much more precise and powerful biosensors, since they have the potential to attain information in a fast and simple manner compared to conventional assays. The present review describes the basic concepts, operation, and construction of biosensors and presented an ideology that choice of categorization, selection of immobilization method and advantages are crucial factors for an efficient and commercial biosensor. Amongst various biosensors, the field effect transistor (FET)-based biosensors have shown much more potential and immense advantages such as high detection ability and sensitivity for both neutral and charged biomolecules and, hence, have been explored comprehensively in the present review. This paper discusses the current challenges in device design by mainly focusing on the quantitative and qualitative performance parameters such as sensing surface properties, signal-to-noise ratio and various other factors, since consideration of these factors will eventually address the crucial concerns related to device design and practical limitations. The critical measures to translate the commercialization of biosensors in the market at a high pace have also been discussed. Hence, the discussion on device challenges illustrates that there is a scope of improvement in the areas such as short-channel effects, specificity and nanocavity filling factor for revolutionary advances in FET-based biosensors. Optimal selection of design rules and biosensing material has the potential to feature the next generation of biosensors. The present paper reports that following integrated multidisciplinary approaches and switching to nanotechnology in designing of FETbased biosensors can offer a lot of improvements in the practical key factors (such as low cost and reliability) and opportunities for the biosensors in the marketplace.

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Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

Cited by 106 publications

References 20 publications

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

A Comprehensive Review on Tunnel Field-Effect Transistor (TFET) Based Biosensors: Recent Advances and Future Prospects on Device Structure and Sensitivity

Recent Advances and Progress in Development of the Field Effect Transistor Biosensor: A Review

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