Large area deposition of ITO films by cluster type sputtering system

Ishibashi, Keiji; Watabe, Kazufumi; Sakurai, T.; Okada, Osamu; Hosokawa, Naokichi

doi:10.1016/s0022-3093(97)00206-8

Cited by 10 publications

(3 citation statements)

References 5 publications

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“…Transparent electrodes such as ITO are usually formed on heated substrates (at 473-673K) to achieve high crystallinity and then low resistivity. [5][6][7][8] However, the uniform heating of a glass substrate in vacuum has been difficult because glass substrates have become and are becoming larger and larger. Therefore, this research considered the formation of SnO 2 films via the electron-beam (EB) plasma-deposition method, 4 which is expected to achieve high crystallinity without heating substrates and we think may be used in the future mass production of FPDs.…”

Section: Methodsmentioning

confidence: 99%

Highly conductive SnO₂ thin films for flat‐panel displays

et al. 2007

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Abstract— SnO2 is considered to be a promising alternative material for indium tin oxide (ITO), which is used for thin‐film transparent electrodes in flat‐panel displays (FPDs) and is facing a serious indium depletion problem. However, annealing processes in the manufacture of plasma‐display panels (PDPs), which are major FPDs, cause high resistivity in SnO2 films. To obtain lower resistivity after the annealing processes, the relationship between deposition conditions and resistivity and the influences of annealing on resistivity, both theoretically and experimentally, were investigated. As a solution, a method involving the formation of a coating of SiO2 on SnO2 is proposed, and a SnO2 resistivity as low as 6.60 × 10−5 Ω‐m was obtained after annealing.

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Section: Methodsmentioning

confidence: 99%

Highly conductive SnO₂ thin films for flat‐panel displays

et al. 2007

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“…Notably, these values are comparable to the wet etching rate of amorphous ITO at room temperature. 8,9) In conclusion, we found that concentrated sulfuric acid (H 2 SO 4 ) is an effective etchant for amorphous Nb-doped TiO 2 (TNO), a precursor of transparent conducting films, with an etching rate of $1:4 nm/min at 95 C. More practical etching rates ranging from several tens to hundreds of nm/min are achievable by raising the etching temperature to 100-200 C. Thus, this simple and low-cost etching technique using H 2 SO 4 is useful for isolating devices or patterning electrodes composed of TiO 2 -based transparent conducting oxides on glass substrate.…”

mentioning

confidence: 99%

Wet Etching of TiO₂-Based Precursor Amorphous Films for Transparent Electrodes

Ohkubo

Hirose

Sakai

et al. 2011

Jpn. J. Appl. Phys.

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We investigated wet etching of Nb-doped anatase TiO2 (TNO) transparent conducting thin films and their precursors in an amorphous phase deposited by rf sputtering on glass substrates. The polycrystalline TNO films showed a very low etching rate of less than 0.06 nm/min in concentrated sulfuric acid (H2SO4) even at elevated temperatures up to 95 °C. In contrast, H2SO4 etched the precursor films at a rate of 1.4 nm/min at 95 °C. The etching rate of the amorphous films followed the Arrhenius equation, leading us to conjecture that a much higher etching rate of ∼230 nm/min can be achieved at 170 °C. These results indicate that wet-etching of precursor amorphous films prior to crystallization represents a practical and low-cost lithographic technique for patterning TiO2-based transparent electrodes.

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“…In recent years, ITO thin films were widely employed in touch panels as touch sensitive layer in resistive and capacitive touch panel technologies [4,5]. However, the ITO thin films used as common and pixel electrodes in flat-panel displays demand an ultralow sheet resistance, and the thickness was usually above 100 nm [6]. During the touch panel fabrication process, the first step of glass or plastic based TCO thin films were deposited by magnetron sputtering process, and then etched the as-deposited thin films to become the detect units of the predetermined pixel sizes.…”

Section: Introductionmentioning

confidence: 99%

Effects of tin content on structure, properties, electrical repeatability, uniformity and stability of high sheet resistance ITO thin films for touch panels

Zhou

Zhu

et al. 2015

J Mater Sci: Mater Electron

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The Sn-doped In 2 O 3 (ITO) thin films with high sheet resistance for touch panels application were deposited by magnetron sputtering process. The effects of tin content on the structure, optical properties, sheet resistance, electrical repeatability, uniformity and stability of ITO thin films were deeply investigated. The ultrathin ITO thin films showed polycrystalline structure with the (222) preferred orientation and smooth surface with low surface roughness. Furthermore, the ultrathin ITO thin films demonstrated strong visible transmittance of above 85 % and had no interference ripples. The ultrathin ITO thin films with ingredient ratio of 95/05 showed stable high sheet resistance, excellent repeatability and uniformity, and could resist the influence from external environment.

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Large area deposition of ITO films by cluster type sputtering system

Cited by 10 publications

References 5 publications

Highly conductive SnO₂ thin films for flat‐panel displays

Highly conductive SnO₂ thin films for flat‐panel displays

Wet Etching of TiO₂-Based Precursor Amorphous Films for Transparent Electrodes

Effects of tin content on structure, properties, electrical repeatability, uniformity and stability of high sheet resistance ITO thin films for touch panels

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Large area deposition of ITO films by cluster type sputtering system

Cited by 10 publications

References 5 publications

Highly conductive SnO2 thin films for flat‐panel displays

Highly conductive SnO2 thin films for flat‐panel displays

Wet Etching of TiO2-Based Precursor Amorphous Films for Transparent Electrodes

Effects of tin content on structure, properties, electrical repeatability, uniformity and stability of high sheet resistance ITO thin films for touch panels

Contact Info

Product

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Highly conductive SnO₂ thin films for flat‐panel displays

Highly conductive SnO₂ thin films for flat‐panel displays

Wet Etching of TiO₂-Based Precursor Amorphous Films for Transparent Electrodes